Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T17:29:54.242Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparative Thickness Measurements of Heterojunction Layers by Ellipsometric, RBS, and XTEM Analysis+

Published online by Cambridge University Press:  26 February 2011

J. A. Woollam ,
P. G. Snyder ,
A. W. McCOrmick ,
A. K. Rai ,
D. C. Ingram ,
P. P. Pronko  and
J. J. Geddes
J. A. Woollam
Affiliation:
Department of Electrical Engineering, University of Nebraska, Lincoln, NE, 68588–0511
P. G. Snyder
Affiliation:
Department of Electrical Engineering, University of Nebraska, Lincoln, NE, 68588–0511
A. W. McCOrmick
Affiliation:
Universal Energy Systems, 4401 Dayton-Xenia Road, Dayton, OH 45432
A. K. Rai
Affiliation:
Universal Energy Systems, 4401 Dayton-Xenia Road, Dayton, OH 45432
D. C. Ingram
Affiliation:
Universal Energy Systems, 4401 Dayton-Xenia Road, Dayton, OH 45432
P. P. Pronko
Affiliation:
Universal Energy Systems, 4401 Dayton-Xenia Road, Dayton, OH 45432
J. J. Geddes
Affiliation:
Physical Sciences Center, Honeywell Corporation, Bloomington, MN 55420
Get access

Abstract

Variable Angle of incidence Spectroscopie Ellipsometry (VASE), Rutherford Backscattering (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM), are used to measure heterojunction layer thicknesses in an AlGaAs/GaAs sample. All three techniques yield the same thickness values within error limits.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 755
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

+

Supported by NASA Lewis Grant NAG-3–154, and the Naval Air Systems Command.

References

REFERENCES

1. Erman, M., Theeten, J.B., Vodjdani, N., and Demay, Y., J. Vac. Sci. Techno. B1, 328 (1983).CrossRefGoogle Scholar
2. Snyder, P.G., Rost, M.C., Bu-Abbud, G.H., Woollam, J.A., and Alterovitz, S.A., J. Appl. Phys. 60, 3292 (1986).Google Scholar
3. MRS Proceedings Vol. 62, “Materials Problem Solving with Transmission Electron Microscopy”, Hobbs, L.W., Westmacott, K.H., and Williams, D.B., Editors, Materials Research Society, 1985.Google Scholar
4. Chu, W.K., Mayer, J.W., and Nicolet, M.A., Backscattering Spectrometry, Academic Press, 1978.CrossRefGoogle Scholar
5. Aspnes, D.E. and Studna, A., Appl. Optics 1O, 1024 (1971).CrossRefGoogle Scholar
6. Aspnes, D.E., J. Vac. Sci. Technol. 18, 289 (1981).CrossRefGoogle Scholar
7. Aspnes, D.E., Kelso, S.M., Logan, R.A., and Bhat, R., J. Appl. Phys. 60, 754 (1986).CrossRefGoogle Scholar
8. Bu-Abbud, G.H., Bashara, N.M., and Woollam, J.A., Thin Solid Films 138, 27 (1986).CrossRefGoogle Scholar
9. Snyder, P.G., Oh, J.E., and Woollam, O.A., “Ellipsometric Analysis of Intrinsic Electric Fields in Semiconductor Heterostructures”, submitted.Google Scholar