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A Comparative Study of Te- and Ge-Based OHMIC Contacts on GaAs

Published online by Cambridge University Press:  26 February 2011

K. Wuyts ,
A. Vantomme ,
R.E. Silverans ,
M. Van Hove  and
M. Van Rossj
K. Wuyts
Affiliation:
Physics Department, University of Leuven, B-3030 Leuven, Belgium
A. Vantomme
Affiliation:
Physics Department, University of Leuven, B-3030 Leuven, Belgium
R.E. Silverans
Affiliation:
Physics Department, University of Leuven, B-3030 Leuven, Belgium
M. Van Hove
Affiliation:
Imec, B-3030 Leuven, Belgium
M. Van Rossj
Affiliation:
Imec, B-3030 Leuven, Belgium
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Abstract

The formation of furnace processed Te- and Ge-based ohmic contacts on n-GaAs was investigated using Rutherford Backscattering Spectroscopy and electrical measurements. Contact resistivities obtained with the Ni/Au/Te metallization were comparable to those of the standard Ni/AuGe scheme, the lowest value for both metallizations being 5.10−6Qcm2. The onset of ohmicity of the Au/Te scheme varied from 480°C to 550°C by changing the Au/Te thickness ratio. The diffusion characteristics of the contacting metals were studied on GaAs as well as on SiO2 substrates. Arguments in favor of the model explaining the nature of the contacts by the formation of a heterojunction-like structure are adduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 545
Copyright
Copyright © Materials Research Society 1989

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References

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