Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-19T04:37:51.115Z Has data issue: false hasContentIssue false

Comparative Study of Si3N4 - Based Ceramics Sintering at Frequencies 30 and 83GHz

Published online by Cambridge University Press:  10 February 2011

Y. Bykov
Affiliation:
Institute of Applied Physics, Russian Academy of Sciences, 46 Ulyanov St., Nizhny Novgorod 603600 Russia.
A. Eremeev
Affiliation:
Institute of Applied Physics, Russian Academy of Sciences, 46 Ulyanov St., Nizhny Novgorod 603600 Russia.
V. Holoptsev
Affiliation:
Institute of Applied Physics, Russian Academy of Sciences, 46 Ulyanov St., Nizhny Novgorod 603600 Russia.
Get access

Abstract

The study of microwave ceramics sintering at different frequencies of radiation has important implication for clarifying a specific effect inherent to microwave-based processes and determining the optimal conditions of sintering which yield a high-quality final product. Comparative study of Si3N4-based ceramics sintering at the frequencies of 30 and 83GHz was undertaken on retention of all the conditions but a frequency and microwave power. It is found that an increase in microwave frequency results in reduction in silicon nitride decomposition during sintering.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Bykov, Yu. V., Eremeev, A.G., Holoptsev, V.V., Semenov, V.E., Birman, A., Calame, J., Carmel, Y., Gershon, D., Levush, B., Dadon, D., Martin, D., Rosen, M., and Hutcheon, R, “Comparative studies of microwave sintering of zinc oxide ceramics at frequencies of 2.45, 30, and 84 GHz”, this Proceedings.Google Scholar
2. Janney, M.A. and Kimrey, H.D., in Microwave Processing of Materials II, edited by Snyder, W.B., Sutton, W.H., Iskander, M.F. and Johnson, D.L. (Mater. Res. Soc. Proc. 189, Pittsburgh, PA 1991), pp. 215227.Google Scholar
3. Tiegs, T.N., Kiggans, J.O. and Kimrey, H.D., in Microwave Processing of Materials II, edited by Snyder, W.B., Sutton, W.H., Iskander, M.F. and Johnson, D.L. (Mater. Res. Soc. Proc. 189, Pittsburgh, PA 1991), pp. 267272.Google Scholar
4. Bykov, Yu., Eremeev, A., Holoptsev, V., in Microwave Processing of Materials IV, edited by Iskander, M.F., Lauf, R.J. and Sutton, W.H. (Mater. Res. Soc. Proc. 347, Pittsburgh, PA 1994), pp. 585590.Google Scholar
5. Clarke, D.R. and Ho, W.W., Adv. Ceram., 7, 246 (1983).Google Scholar
6. Parshin, V.V., private communication.Google Scholar
7. Ho, W.W., in Microwave Processing of Materials, edited by Sutton, W.H., Brooks, M.H. and Chabinsky, I.J. (Mater. Res. Soc. Proc. 124, Pittsburgh, PA 1988), pp. 137148.Google Scholar