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Comparative Study of Light-Emitting Porous Silicon Anodized with Light Assistance and in the Dark

Published online by Cambridge University Press:  25 February 2011

L. Tsybeskov ,
C. Peng ,
S.P. Duttagupta ,
E. Ettedgui ,
Y. Gao ,
P.M. Fauchet  and
G.E. Carver
L. Tsybeskov
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
C. Peng
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
S.P. Duttagupta
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
E. Ettedgui
Affiliation:
Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627
Y. Gao
Affiliation:
Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627
P.M. Fauchet
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
G.E. Carver
Affiliation:
AT&T Bell Laboratories, Princeton, NJ 08540
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Abstract

In this study, we compare two different types of light emitting porous silicon (LEpSi) samples: LEpSi anodized in the dark (DA) and LEpSi anodized with light assistance (LA). On the basis of photoluminescence (PL), Raman, FTIR, SEM, spatially resolved reflectance (SRR) and spatially resolved photoluminescence (SRPL) studies, we demonstrate that the luminescence in LA porous silicon is strong, easily tunable, very stable and originates from macropore areas. These attractive properties result from passivation by oxygen in the Si-O-Si bridging configuration that takes place during electrochemical anodization. In addition, we have been able to correlate light emission with the presence of crystalline silicon nanograins.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 307
Copyright
Copyright © Materials Research Society 1993

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References

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