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Comparative Study of Hot-Wire Chemical Vapor Deposition onto (100) Si Near 600°C: Epitaxial and Polycrystalline Silicon Films

Published online by Cambridge University Press:  01 February 2011

Charles W. Teplin ,
Howard M. Branz ,
Kim M. Jones ,
Bobby To ,
Eugene Iwaniczko  and
Paul Stradins
Charles W. Teplin
Affiliation:
[email protected], NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States, 303-384-6440, 303-384-7600
Howard M. Branz
Affiliation:
[email protected], NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States
Kim M. Jones
Affiliation:
[email protected], NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States
Bobby To
Affiliation:
[email protected], NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States
Eugene Iwaniczko
Affiliation:
[email protected], NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States
Paul Stradins
Affiliation:
[email protected], NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States
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Abstract

Previously, we reported improved silicon epitaxy by hot-wire chemical vapor deposition (HWCVD) between about 600 and 650°C. Such temperatures are compatible with the thickening of large-grained Si seed layers on borosilicate glasses or other inexpensive substrates. Here, we provide detailed real-time spectroscopic ellipsometry (RTSE) and x-ray diffraction (XRD) analysis of two films grown near 600°C. A film grown at 594°C shows breakdown to a polycrystalline phase, while a film grown at 627°C is entirely epitaxial. Transmission electron microscopy (TEM) of this epitaxial film shows dislocation defects that originate at the substrate/film interface, suggesting that an optimized surface preparation could yield lower defect densities.

Keywords

epitaxySichemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A06-12
Copyright
Copyright © Materials Research Society 2007

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References

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