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Comparative Study of Electronically Controlled Motion of Hydrogen around Carbon and Platinum Atoms in Silicon

Published online by Cambridge University Press:  17 March 2011

Yoichi Kamiura ,
Namula Bao ,
Kimihiro Sato ,
Kazuhisa Fukuda ,
Yasuyuki Iwagami ,
Yoshifumi Yamashita  and
Takeshi Ishiyama
Yoichi Kamiura
Affiliation:
Faculty of Engineering, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan
Namula Bao
Affiliation:
Faculty of Engineering, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan
Kimihiro Sato
Affiliation:
Faculty of Engineering, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan
Kazuhisa Fukuda
Affiliation:
NEC Laboratories, Otsu 520-0833, Japan
Yasuyuki Iwagami
Affiliation:
Faculty of Engineering, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan
Yoshifumi Yamashita
Affiliation:
Faculty of Engineering, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan
Takeshi Ishiyama
Affiliation:
Faculty of Engineering, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan
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Abstract

We have studied the local motion of hydrogen in the neighborhood of carbon and platinum impurities by observing the stress-induced reorientation and subsequent recovery of two H-related (H-C and Pt-H2) complexes in Si, using deep-level transient spectroscopy (DLTS) under uniaxial compressive stress. We notice two interesting differences in hydrogen motion around carbon and platinum atoms. The first one is a difference in the temperature where stress-induced reorientation occurs. That of the H-C complex occurs at high temperatures above 250 K, while it occurs at low temperatures around 80 K for the Pt-H2 complex. The second difference is the effect of charge state of the complexes on their stress-induced reorientation and subsequent recovery. It occurs preferentially when an electron occupies the level of the H-C complex, but the Pt- H2 complex has the reverse effect of level occupancy. These differences are discussed from viewpoint of different atomic configurations and electronic states of two H-related complexes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 813: Symposium G – Hydrogen in Semiconductors , 2004 , H6.4
Copyright
Copyright © Materials Research Society 2004

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References

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