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Comparative Electrical Study of Epitaxial and Polycrystalline GdSi2/(100)p-Si Schottky Barriers

Published online by Cambridge University Press:  25 February 2011

B. Kovács ,
Zs. J. Horváth ,
I. Mojzes ,
G. Molnár ,
G. Petó  and
M. Andrási
B. Kovács
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest P.O. Box 76, H-1325, Hungary
Zs. J. Horváth
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest P.O. Box 76, H-1325, Hungary
I. Mojzes
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest P.O. Box 76, H-1325, Hungary Technical University, Budapest, H-1521, Hungary
G. Molnár
Affiliation:
Central Research Institute for Physics of the Hungarian Academy of Sciences, Budapest P.O. Box 49, H-1525, Hungary
G. Petó
Affiliation:
Central Research Institute for Physics of the Hungarian Academy of Sciences, Budapest P.O. Box 49, H-1525, Hungary
M. Andrási
Affiliation:
Central Research Institute for Physics of the Hungarian Academy of Sciences, Budapest P.O. Box 49, H-1525, Hungary
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Abstract

The electrical and interface parameters of epitaxial orthorombic, textured orthorombic, polycrystalline orthorombic, and polycrystalline hexagonal structures with different initial thickness of the evaporated Gd layer are compared. The Schottky barrier height, the ideality factor, the series resistance, the breakdown voltage, the relative interfacial layer thickness, the energy distribution spectra of interface states, and the equilibrium interface charge have been evaluated from the current-voltage and capacitance-voltage measurements. The obtained results indicate that the initial thickness of the Gd layer influences much more stronger the obtained parameters through the perfection of the epitaxial layer than the crystal structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 697
Copyright
Copyright © Materials Research Society 1992

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References

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