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Comparative Discharge Diagnostic Study of Silane, Disilane, and Germane RF Discharges Using Optical Emission Spectroscopy and Mass Spectrometry

Published online by Cambridge University Press:  26 February 2011

H. Chatham  and
P. K. Bhat
H. Chatham
Affiliation:
Glasstech Solar, Inc., (GSI) 12441 West 49th Avenue, Wheatridge, Colorado 80033 U.S.A.
P. K. Bhat
Affiliation:
Glasstech Solar, Inc., (GSI) 12441 West 49th Avenue, Wheatridge, Colorado 80033 U.S.A.
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Abstract

Measurements of the depletions of the feedstock gases in monosilane-germane and disilane-germane rf discharges indicate that the dissociation rates of germane and monosilane differ by a factor of 2 whereas the dissociation rates of germane and disilane differ by a factor of 0.8. As a result, larger germane concentrations are required in disilane-germane than in monosilane-germane discharges in order to achieve equal germanium content in the resulting films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 31
Copyright
Copyright © Materials Research Society 1988

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References

1) Tanaka, K. and Matsuda, A., Mater. Sci. Reports, 3, 142 (1987).Google Scholar
2) Shing, Y.H., DOE Report, Section I, Jet Propulsion Laboratory Document #D-5170, Jan. 1988.Google Scholar
3) Hata, N., Matsuda, A. and Tanaka, K., J. Appl. Phys. 61, 3055, (1987).Google Scholar
4) Paul, W., Proc. 1986 KOSEF/NSF Joint Seminar: Phys. Semicond. Mat. and Appl., p. 3.Google Scholar
5) Gasper, P.P. and Frost, J.J., J. Amer. Chem. Soc. 95, 6567 (1973).CrossRefGoogle Scholar
6) Perrin, J. and Aarts, J.E.M., Chem. Phys. 80, 351, (1983).Google Scholar
7) Perrin, J., Schmitt, J.P.M, DeRosny, G., Huc, J. and Lloret, A., Chem. Phys. 73, 383 (1982).CrossRefGoogle Scholar
8) Austin, E.R. and Lampe, F.W., J. Phys. Chem. 81, 1134 (1987).Google Scholar
9) Mitchell, K.W., Shing, Y.H., Grosvnor, V. and Yan, P., Proc. 18th IEEE PVSC (1985), 894.Google Scholar
10) McKean, D.C., Torto, I., and Morrison, A.R., J. Phys. Chem. 88, 307 (1982).CrossRefGoogle Scholar
11) Paul, W., Paul, D.K., von Roedern, B., Blake, J., and Oguz, S., Phys. Rev. Lett. 46, 1016 (1981).CrossRefGoogle Scholar