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Compamson in the Growth and Properties of rf Sputtered μc-Si:Hand Glow Discharge-Chemical Vapor Deposited μc-Si:H Films

Published online by Cambridge University Press:  15 February 2011

J. Y. Lin ,
B. H. Tseng ,
K. C. Hsu  and
H. L. Hwang
J. Y. Lin
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kao-Shiung, Taiwan, ROC.
B. H. Tseng
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kao-Shiung, Taiwan, ROC.
K. C. Hsu
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan, ROC.
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan, ROC.
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Abstract

Properties of μc-Si:H films grown by rf sputtering and by glowdischarge-chemical vapor deposition (GD-CVD) using diluted-hydrogen andhydrogen-atom-treatment method were compared employing TEM, X-raydiffraction, Raman scattering and FT-IR. The films deposited by both methodsall exhibited comparable grain sizes in the range of 10–18 nm. and showedthe same tendency in almost all the Measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 731
Copyright
Copyright © Materials Research Society 1994

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References

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