Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T02:38:05.595Z Has data issue: false hasContentIssue false
  • English
  • Français

Combined Spectroscopic Ellipsometry and Ion Beam Surface Analysis for In-Situ Real-Time Characterization of Complex Oxide Film Growth

Published online by Cambridge University Press:  10 February 2011

A.H. Mueller ,
Y. Gao ,
E.A. Irene ,
O. Auciello ,
A.R. Krauss  and
J.A. Schultz
A.H. Mueller
Affiliation:
Department of Chemistry, University of North Carolina at Chapel Hill
Y. Gao
Affiliation:
Department of Chemistry, University of North Carolina at Chapel Hill
E.A. Irene
Affiliation:
Department of Chemistry, University of North Carolina at Chapel Hill
O. Auciello
Affiliation:
Material Science Division, Argonne National Laboratory, Argonne, IL
A.R. Krauss
Affiliation:
Material Science and Chemistry Division, Argonne National Laboratory, Argonne, IL
J.A. Schultz
Affiliation:
lonwerks, Houston, Texas
Get access

Abstract

In-situ real time characterization of chemically and structurally complex thin films is becoming important as complex materials are finding more applications in electronic devices. To this end, a unique thin film growth and deposition system was constructed combining a multi-target sputter deposition system with spectroscopic ellipsometry and time-of-flight ion scattering and recoil spectroscopy. This system is demonstrated with studies on YBa2Cu3O7−δand BaSrTiO3 films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 569: Symposium U – In Situ Process Diagnostics and Modelling , 1999 , 15
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Kelly, M.K., Barboux, P., Tarascon, J.-M., Aspnes, D.E., Bonner, W.A., and Morris, P.A., Phys.Rev. 38, 870 (1988)10.1103/PhysRevB.38.870Google Scholar
2 Aspnes, D.E. and Kelly, M.K., IEEE J. Quantum Electron. 25, 2378 (1989)10.1109/3.42069Google Scholar
3 Michaelis, A., Irene, E.A., Auciello, O. and Krauss, A.R., J. Appl. Phys. 83, (12) 7736, 15 June, 1998 10.1063/1.367947Google Scholar
4 Lin, Yuping, Krauss, A.R., Auciello, O., Nishino, Y., Gruen, D.M., Chang, R.P.H. and Schultz, J.A., J. Vac. Sci. Technol. A 12 (4), 1557, Jul/Aug 1994 10.1116/1.579355Google Scholar
5 Hammond, M.S., Schultz, J.A. and Krauss, A.R., J. Vac. Sci. Techmol. A 13 (3), 1136, May/Jun 1995 10.1116/1.579600Google Scholar
6 Ionwerks, Inc., Houston, Texas 77005Google Scholar