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Combined MOCVD and MBE growth of GaN on porous SiC

Published online by Cambridge University Press:  01 February 2011

Ashutosh Sagar ,
R. M. Feenstra ,
C. K. Inoki ,
T. S. Kuan  and
D. D. Koleske
Ashutosh Sagar
Affiliation:
Dept. of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
R. M. Feenstra
Affiliation:
Dept. of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
C. K. Inoki
Affiliation:
Dept. of Physics, University at Albany, SUNY, Albany, NY 12222
T. S. Kuan
Affiliation:
Dept. of Physics, University at Albany, SUNY, Albany, NY 12222
D. D. Koleske
Affiliation:
Chemical Processing Science Dept., Sandia National Lab., Albuquerque, NM 87185
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Abstract

GaN films have been grown homoepitaxially by MOCVD on MBE-grown GaN template layers, using both porous and nonporous SiC substrates. The effect of the porous SiC substrates on dislocations in the MBE and MOCVD GaN layers has been studied using TEM and x-ray characterization. A reduction in dislocation density from ≥1×1010 cm-2 in the MBE template to 2.5×109 cm-2 at the top of the MOCVD film is found, with similar final values in the MOCVD films for both porous and nonporous substrates. We discuss various mechanisms by which dislocation density is reduced in the MOCVD layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y9.6
Copyright
Copyright © Materials Research Society 2004

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References

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