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Combinatorial Molecular Layer Epitaxy of Hf Based Phosphor Oxides

Published online by Cambridge University Press:  17 March 2011

N. Arai
Affiliation:
Frontier Collaborative Research Center Laboratory, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
T. W. Kim
Affiliation:
Frontier Collaborative Research Center Laboratory, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
H. Kubota
Affiliation:
Frontier Collaborative Research Center Laboratory, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Y. Matsumoto
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
H. Koinuma
Affiliation:
Frontier Collaborative Research Center Laboratory, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan COMET, Tsukuba 305-0044, Japan CREST, Tokyo 169-0072, Japan
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Abstract

A series of MHfO3: Tm (M =Ca, Sr and Ba) composition spread films and superlattices (SLs) were quickly fabricated on SrTiO3 (001) substrate in the molecular layer-by-layer growth using combinatorial pulsed laser deposition (PLD) under in-situ reflection high-energy electron diffraction (RHEED) monitoring. Crystal structures and luminescence properties of composition-spread and SLs were evaluated by the concurrent X-ray diffractometer and cathode luminescence (CL), respectively. CL properties of the films were found strongly dependent on their composition and stacking sequence. Possible effect of the stress due to the film-substrate interaction on the CL property is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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