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Color Centers in Magnesium Doped Polycrystalline Alumina

Published online by Cambridge University Press:  21 March 2011

L. R. Brock ,
K. C. Mishra ,
Madis Raukas ,
Walter P. Lapatovich  and
George C. Wei
L. R. Brock
Affiliation:
OSRAM SYLVANIA, Research and Development, Beverly, MA 01915, U.S.A
K. C. Mishra
Affiliation:
OSRAM SYLVANIA, Research and Development, Beverly, MA 01915, U.S.A
Madis Raukas
Affiliation:
OSRAM SYLVANIA, Research and Development, Beverly, MA 01915, U.S.A
Walter P. Lapatovich
Affiliation:
OSRAM SYLVANIA, Research and Development, Beverly, MA 01915, U.S.A
George C. Wei
Affiliation:
OSRAM SYLVANIA, Research and Development, Beverly, MA 01915, U.S.A
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Abstract

We have investigated color centers in MgO-doped polycrystalline alumina (PCA) using absorption, excitation, and emission spectroscopy. Most of the color centers that were reported in earlier studies of the crystalline material have been observed to be present in the polycrystalline material. The absorption spectral features observed in the PCA are attributed to various color centers; however, they are not sufficiently resolved to make unique assignments. Suitable combinations of excitation and emission spectroscopy and also measurements at low temperature were therefore used to identify most of the color centers in this material.

Among the numerous color centers that we have identified in PCA are variations of electron centers including F, F+, F2+, F22+ and F+-Mg ((Vo•-MgAl')x). The most prominent oxygen vacancy related defect observed at room temperature was the F+-Mg center, with absorption bands located at 217 and 249 nm, and an emission band at 303 nm. This center can be thought of as being formed by association of an F+ center with a Mg defect. The single crystal sapphire samples containing no Mg show only F+ (Vo•) centers with 230 and 257 nm absorption bands, and a 328 nm emission band.

Low temperature (22 K) fluorescence excitation measurements of PCA led to emission from F22+center at 467 nm. Additionally, there is evidence that the observed 368 nm emission band could be attributed to the zero-phonon line associated with the F2+center.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 667: Symposium G – Luminescence and Luminescent Materials , 2001 , G7.1
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Geven, A.S.G., Renardus, M.L.P., Seinen, P.A., Stoffels, J.A.J., Wijenberg, C., Dielis, H.R., European Patent Ap. 0587238A1, High Pressure Discharge Lamp, (1994).Google Scholar
2. Jüngst, S., U.S. Patent Number 5352952, High-Pressure Discharge Lamp with Ceramic Discharge Vessel, (1994).Google Scholar
3. Coble, R.L., U.S. Patent Number 3026210, Transparent Alumina and Method of Preparation, (1962).Google Scholar
4. Parker, K.E. and Evans, D.T., Lamp Materials, Lamps and Lighting, ed. Coaton, J.R. and Marsden, A.M. (Arnold, 1997), 119–136.Google Scholar
5. Agullo-Lopez, F., Catlow, C.R.A. and Townsend, P.D., Point Defects in Materials, (Academic Press, 1988).Google Scholar
6. Crawford, J.H. Jr, Semiconductors and Insulators, 5, 599 (1983).Google Scholar
7. Pogatshnik, G.J., Chen, Y. and Evans, B.D., IEEE Trans. Nucl. Sci., NS–34, 1709 (1987).Google Scholar
8. Crawford, J.H. Jr, Nucl. Inst. And Meth. B, 1, 159 (1984).Google Scholar
9. Evans, B.D. and Stapelbrock, M., Phys. Rev. B, 18, 7089 (1978).Google Scholar
10. Kulis, P.A., Springis, M.J., Tale, I.A., Vainer, V.S. and Valbis, J.A., Phys. Stat. Sol. B, 104, 719 (1981). G7.1.10Google Scholar
11. Kortov, V.S., Bessonov, T.S., Akselrod, M.S., Milman, I.I., Phys. Stat. Sol. A, 87, 629 (1985).Google Scholar
12. Evans, B.D., Nucl. Instr. And Meth. B, 91, 258 (1994).Google Scholar
13. Evans, B.D., J. Appl. Phys., 70, 3995 (1991).Google Scholar
14. Pogatshnik, G.J., Chen, Y., J. Luminescence, 40 &41, 315 (1988).Google Scholar
15. Mohapatra, S.K. and Kröger, F.A., J. Am. Ceramic Soc., 60, 141 (1977).Google Scholar
16. Langerlöf, K.P.D. and Grimes, R.W., Acta. Mater., 46, 5689 (1998).Google Scholar
17. Kröger, F.A. and Vink, H.K., in Solid State Physics, edited by Seitz, F. and Turnbull, D., (Academic Press, 1956), p. 307.Google Scholar
18. Plaskin, O.A., Stephanov, V.A., Stephanov, P.A. and Chernov, V.M., J. Nucl. Mat., 271 & 272 (1999).Google Scholar
19. Kotomin, E.A., Stashans, A., and Jacobs, P.W.M., Radiation Effects and Defects in Solids, 134, 87 (1995).Google Scholar
20. Gamble, F.T., Bartram, R.H., Young, C.G. and Gilliam, O.R., Physical Review, 134, A589 (1964).Google Scholar
21. Turner, T.J. and Crawford, J.H. Jr, Solid State Comm., 17, 197 (1975).Google Scholar
22. Levy, P.W., Phys. Rev., 123, 1226 (1961).Google Scholar
23. Lee, K.H., Holmberg, G.E. and Crawford, J.H. Jr, Solid State Comm., 20, 183 (1976).Google Scholar
24. Atobe, K. and Nakagawa, N., Cryst. Latt. Def. And Amorph. Mat., 17, 229 (1987).Google Scholar
25. Evans, B.D. and Stapelbrock, M., Solid State Comm., 33, 765 (1980).Google Scholar
26. Kotomin, E.A. and Popov, A.I., Nucl. Inst. And Meth. B, 141, 1 (1998).Google Scholar