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Coherent V2O3 Precipitates in ɑ-Al2O3 Co-Implanted With Vanadium and Oxygen

Published online by Cambridge University Press:  21 February 2011

Laurence A. Gea ,
L. A. Boatner ,
Janet Rankin  and
J. D. Budai
Laurence A. Gea
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831
L. A. Boatner
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831
Janet Rankin
Affiliation:
Brown University, Providence, RI02912
J. D. Budai
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831
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Abstract

The oxides of vanadium VO2 and V2O3 are of fundamental and practical interest since they undergo structural phase transitions during which large variations in their optical and electronic properties are observed. In the present work, we report the formation of buried precipitates of V2O3 in sapphire by ion implantation and thermal annealing. It was found that the co-implantation of oxygen and vanadium was required in order to form nanophase V2O3 precipitates. Additionally, these precipitates, which formed only following an anneal of the co-implanted sample under reducing conditions, are coherent with the sapphire lattice. Two epitaxial relationships were observed: (0001)V2O3//(0001) ɑ-Al2O3 and (11-20)V2O3//(0001) ɑ-Al2O3. This finding is in agreement with results obtained elsewhere for thin films of V2O3 deposited on c-axis-oriented sapphire.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 269
Copyright
Copyright © Materials Research Society 1995

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