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Coherent Precipitate Formation In Pulsed-Laser And Thermally-Annealed,Ion-Implanted Si.

Published online by Cambridge University Press:  15 February 2011

B. R. Appleton ,
J. Narayan ,
O. W. Holland  and
S. J. Pennycook
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
O. W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
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Abstract

It Will be shown that under suitable conditions ion implanted impurities in Si can precipitate and grow coherently within the single crystal lattice during recrystallization induced by pulsed laser or thermal annealing. Ion channeling and transmission electron microscopy (Tem) were used to characterize such precipitates in Si implanted with Sb and B and thermally annealed, and in Si implanted with Tl and annealed with a pulsed ruby laser.The orientations of these precipitates were determined from TEM and detailed angular scans using ion scattering channeling.The nucleation and precipitation processes will be discussed in terms of differences in the liquid and solid phase regrowth mechanisms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 281
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

*Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.Mat. Res.

References

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