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Coherent Anti-Stokes Raman Scattering Measurements of Group V Hydride and Trimethylgallium Decomposition in Organometallic Vapor Phase Epitaxy

Published online by Cambridge University Press:  25 February 2011

R. Löckerath ,
H. J. Koss ,
P. Tommack ,
W. Richter  and
P. Balk
R. Löckerath
Affiliation:
I. Physik. Inst., RWTH Aachen, Sommerfeldstr., Turm 28, D-5100 Aachen, Federal Republic of Germany
H. J. Koss
Affiliation:
I. Physik. Inst., RWTH Aachen, Sommerfeldstr., Turm 28, D-5100 Aachen, Federal Republic of Germany
P. Tommack
Affiliation:
I. Physik. Inst., RWTH Aachen, Sommerfeldstr., Turm 28, D-5100 Aachen, Federal Republic of Germany
W. Richter
Affiliation:
Inst. f. Festkörperphysik, TU Berlin, Hardenbergstr. 36, D-1000 Berlin 12, Federal Republic of Germany
P. Balk
Affiliation:
Inst. of Semicond. Electronics, RWTH Aachen, D-5100 Aachen, Federal Republic of Germany
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Abstract

The thermal decomposition of AsH3 and TMG is measured insitu under different experimental conditions. Simultaneously the production of H2, CH4 and C2H6 is observed. The data indicate a situation where AsH3 is only partially decomposed at the GaAs surface. The hydrogen released removes additional CH3 groups from the trimethyl-gallium (TMG) molecule, enhances the decomposition of TMG, and thereby forms methane.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 91
Copyright
Copyright © Materials Research Society 1989

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References

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