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Cobalt Silicide Formation on Polysilicon: Dopant Effects on Reaction Kinetics and Silicide Properties

Published online by Cambridge University Press:  25 February 2011

A. R. Sitaram  and
S. P. Murarka
A. R. Sitaram
Affiliation:
now with APRDL, Motorola Inc., 3501, Ed Bluestein Boulevard, Austin, TX 78721.
S. P. Murarka
Affiliation:
Materials Engineering Department/CIE, Rensselaer Polytechnic Institute, Troy, NY 12180.
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Abstract

The concept of using cobalt disilicide as a self-aligned metallization scheme for gate/interconnection and contact formation is gaining wide acceptance. The silicide formation on the gate will require a Co-metal film interaction with the underlying polysilicon that may be doped heavily. We have investigated the silicide formation kinetics during this reaction. The effect of different dopants (B,P, and As) and their concentration on the Co-Si interaction and the dopant redistribution during such reactions were investigated. The results from these studies will be presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 185
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Murarka, S.P., J. Vac. Sci. Technol. B, 4(6), 1325 (1986).CrossRefGoogle Scholar
2. Murarka, S.P., Fraser, D.B., Sinha, A.K., Levinstein, H.J., Lloyd, E.J., Liu, R., Williams, D.S., and Hillenius, S.J., IEEE Trans. Electron. Dev., ED–34(10), 2108 (1987).CrossRefGoogle Scholar
3. Murarka, S.P. and Lloyd, E.J., Unpublished.Google Scholar
4. Maex, K., Ghosh, G., Delaey, L., Probst, V., Lippens, P., Van den Hove, L., and De Keersmaecker, R.F., J. Mater. Res., 4(5), 1209 (1989).CrossRefGoogle Scholar
5. Murarka, S.P. and Williams, D.S., J. Vac. Sci. Technol. B, 5(6), 1674 (1987).CrossRefGoogle Scholar
6. van Gurp, G.J., van der Weg, W.F., and Sigurd, D., J. Appl. Phys., 49, 4011 (1978).CrossRefGoogle Scholar
7. Pretorius, R., Wandt, M.A.E., MacLeod, J.E., Botha, A.P., and Comrie, C.M., J. Electrochem. Soc., 136(3), 839 (198).CrossRefGoogle Scholar
8. Kern, W., Solid State Technology, 15, 34 (1974).Google Scholar
9. Biersack, J.P. and Hoggmark, L.P., Nucl. Instrum. Methods, 174, 257 (1980).CrossRefGoogle Scholar
10. Sitaram, A.R., Murarka, S.P., and Sheng, T.T., J. Mater. Res., 5(2), 360 (1990).CrossRefGoogle Scholar
11. Pai, C.S., Baiocchi, F.A., and Williams, D.S., J. Appl. Phys., 67(3), 1940 (1990).CrossRefGoogle Scholar
12. Sitaram, A.R., Ph.D. thesis, Rensselaer Polytechnic Institute, Troy, NY, (1990).Google Scholar
13. d’Huerle, F.M. and Petersson, C.S., Thin Solid Films, 128, 283 (1985).Google Scholar