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A CMP Numerical Model Combining Die Scale and Feature Scale Polishing Characteristics

Published online by Cambridge University Press:  18 March 2011

Stéphanie Delage ,
Frank Meyer  and
Goetz Springer
Stéphanie Delage
Affiliation:
Infineon Technologies AG, Memory Products, Balanstrasse 73, D-81541 Munich, Germany
Frank Meyer
Affiliation:
Infineon Technologies Dresden GmbH & Co.OHG, Center for Development and Innovation, P.O. Box 10 09 40, D-01076 Dresden, Germany
Goetz Springer
Affiliation:
Infineon Technologies Dresden GmbH & Co.OHG, Center for Development and Innovation, P.O. Box 10 09 40, D-01076 Dresden, Germany
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Abstract

In this paper a new numerical model combining die scale and feature scale polishing characteristics for oxide CMP is proposed. This work is based on the effective density model [1-3] which takes into account a die scale pad deformation. We have extended this model to include the description of material removal at the feature scale. A pseudo topography discretization allows us to describe the polishing in down areas more accurately depending on the down area width. The physical parameters considered include the deformation of the polishing pad (die scale and feature scale), the removal rate of a blanket wafer polished under the same process conditions, and the removal rate in down areas for small polishing times.

Comparison of simulated results with MIT testreticle experiments has been performed and evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 671: Symposium M – Chemical-Mechanical Polishing 2001–Advances and Future Challenges , 2001 , M5.5
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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