Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T19:28:33.351Z Has data issue: false hasContentIssue false
  • English
  • Français

Closed-Loop Thickness Control of Resonant-Tunneling Diode Mbe Growth Using Spectroscopic Ellipsometry

Published online by Cambridge University Press:  15 February 2011

F. G. Celii ,
Y.-C. Kao ,
T. S. Moise ,
M. Woolsey ,
T. B. Harton  and
K. Haberman
F. G. Celii
Affiliation:
Corporate Research, Texas Instruments, M/S 147, P. 0. Box 655936, Dallas, TX 75265; [email protected]
Y.-C. Kao
Affiliation:
Corporate Research, Texas Instruments, M/S 147, P. 0. Box 655936, Dallas, TX 75265; [email protected]
T. S. Moise
Affiliation:
Corporate Research, Texas Instruments, M/S 147, P. 0. Box 655936, Dallas, TX 75265; [email protected]
M. Woolsey
Affiliation:
Corporate Research, Texas Instruments, M/S 147, P. 0. Box 655936, Dallas, TX 75265; [email protected]
T. B. Harton
Affiliation:
Corporate Research, Texas Instruments, M/S 147, P. 0. Box 655936, Dallas, TX 75265; [email protected]
K. Haberman
Affiliation:
Corporate Research, Texas Instruments, M/S 147, P. 0. Box 655936, Dallas, TX 75265; [email protected]
Get access

Abstract

The room temperature electrical characteristics of AlAs/InGaAs/InAs resonant-tunneling diode (RTD) devices are sensitive to sub-monolayer thickness changes, and present a challenging case for closed-loop control. We prepared stacked RTD structures by MBE in which the strained AlAs barrier thicknesses were controlled based on an in situ spectroscopic ellipsometry (SE) system. The short-term and long-term reproducibility of RTDs grown under SE-based control was compared with similar samples grown by “dead-reckoning” (timing-based shutter openings coupled with pre-growth flux calibrations). SE-based calibration can compensate for long-term flux drift, but closed-loop thickness control did not provide a significant improvement over deadreckoning in terms of short-term RTD reproducibility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 365
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Seabaugh, A. C., Luscombe, J. Hand Randall, J. N., Future Electron. Dev. J., 3, Suppl. 1 (1993) 9.Google Scholar
2. Broekaert, T. P. E., Lee, W.and Fonstad, C. G., Appl. Phys. Lett., 53 (1988) 1545.Google Scholar
3. Moise, T. S., Kao, Y.-C., Katz, A. I., Broekaern, T. P. E.and Celii, F. G., J. Appl. Phys., 78 (1995) 6305.Google Scholar
4. “Molecular Beam Epitaxy,” Cho, A. Y., ed. (AIP Press, Woodbury, 1994).Google Scholar
5. Evans, K. R., Kaspi, R., Cooley, W. T., Jones, C. R.and Solomon, J. S., Mat. Res. Soc. Symp. Proc., 300 (1993) 495.Google Scholar
6. Chalmers, S. A.and Killeen, K. P., Appl. Phys. Lett., 63 (1993) 3131.Google Scholar
,. Celii, F. G., Harton, T. B., Kao, Y.-C. and Moise, T. S., Appl. Phys. Lett., (1995), 66 (1995) 2555.Google Scholar
8. Houng, Y. M., Tan, M. R. T., Liang, B. W., Wang, S. Y.and Mars, D. E., J. Vac. Sci. Technol. B, 12 (1994) 1221.Google Scholar
9. Liu, X., Ranalli, E., Sato, D. L., Li, Y., and Lee, H. P., J. Vac. Sci. Technol. B, 13 (1995) 742.Google Scholar
10. Aspnes, D. E., Quinn, W. E., Tamargo, M. C., Pudensi, M. A. A., Schwarz, S. A., Brasil, M. J. S. P., Nahory, R. E.and Gregory, S., Appl. Phys. Lett., 60 (1992) 1244.Google Scholar
11. Kuo, C.-H., Anand, S., Droopad, R., Mathine, D. L., Maracas, G. N., Johs, B., He, P., Woollam, J. A.and Levola, T., Proceedings of the 21st International Symposium on Compound Semiconductors, September, 1994 (IOP. Bristol, 1995), p. 29.Google Scholar
12. Aspnes, D. E., Quinn, W. E.and Gregory, S., Appl. Phys. Lett., 57 (1990) 2707.Google Scholar
13. Pickering, C., Thin Solid Films, 206 (1991) 275–282.Google Scholar
14. Celii, F. G., Kao, Y.-C.and Duncan, W. M., J. Electron. Mater., 24 (1995) 391.Google Scholar
15. Celii, F. G., Kao, Y.-C.. Katz, A. J.and Moise, T. S., J. Vac. Sci. Technol. A (1995) 13 (1995) 733.Google Scholar
16. Celii, F. G., Kao, Y.-C., Moise, T. S., Katz, A. J., Harton, T. B., Woolsey, M.and Jobs, B., in ”Semiconductor Characterization: Present Status and Future Needs, ” (AlP Press, 1996), p. 507.Google Scholar
17. Duncan, W. M.and Henck, S. A., Appl. Surf. Sci., 63 (1993) 9.Google Scholar
18. The WVASE analysis software is a product of the J. A. Woollam Co., Lincoln, NE.Google Scholar
19. Celii, F. G., Kao, Y.-C., Duncan, W. M.and Jobs, B., Proceedings of the 21st International Symposium on Compound Semiconductors, September, 1994 (lOP, Bristol, 1995), p. 35.Google Scholar
20. Celii, F. G., Kao, Y.-C., Liu, H.-Y., Files-Sesler, L. A.and Beam, E. A., III, J. Vac. Sci. Technol. B, 11 (1993) 1014.Google Scholar
21. Celii, F. G., Moise, T. S., Kao, Y.-C.and Katz, A. J., J. Spec. Topiics Quantum Electron., (1995) in press.Google Scholar
22. Aspnes, D. E., Appl. Phys. Lett., 62 (1993) 343.Google Scholar