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Cl2 Plasma Etching of Si(100): Surface Chemistry and Damage

Published online by Cambridge University Press:  03 September 2012

N. Layadi ,
V. M. Donnelly  and
J. T. C. Lee
N. Layadi
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, NJ 07974, USA.
V. M. Donnelly
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, NJ 07974, USA.
J. T. C. Lee
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, NJ 07974, USA.
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Abstract

The interaction of a Cl2 plasma with a Si(100) surface has been investigated by angle resolved x-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry. From XPS, it was found that the amount of chlorine incorporated at the Si surface increases with ion energy. Chlorine is present as SiClx (x = 1-3) with average relative coverages (integrated over depth) of [SiCl]:[SiCl2]:[SiCl3] ≅ 1:0.33:0.1. These relative coverages don’t depend strongly on ion energy between 40 and 280 eV. Real-time spectroscopic ellipsometry measurements showed that the layer present during etching is stable when the plasma is extinguished and the gas pumped away. In addition, the equivalent thickness of damaged silicon and silicon-chloride within the surface layer increases with ion energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 39
Copyright
Copyright © Materials Research Society 1997

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References

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