Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T07:50:28.353Z Has data issue: false hasContentIssue false
  • English
  • Français

Cl2 Chemically Assisted Sputter-Etching of Permalloy

Published online by Cambridge University Press:  21 February 2011

M. J. Vasile  and
C. J. Mogab
M. J. Vasile
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
C. J. Mogab
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Get access

Abstract

Redeposition-free patterns have been etched in 3000Å thick permalloy films using the technique of chemically assisted sputter-etching. This technique involves the simultaneous adsorption of a reactant gas from a molecular beam source and normally incident argon ion bombardment. Experimental conditions with Cl2 adsorption can be maintained to etch the permalloy at 80Å/min and to etch positive photoresist at 110Å/min. These etch rates are not significantly different from rates obtained with argon ion milling, even though the permalloy surface is known to incorporate Cl2. Re-deposited material observed with Cl2 chemically assisted sputtering has been shown to be water soluble, and can be completely removed from feature side-walls prior to stripping the resist. Linewidth measurements show that no feature broadening occurs on 2 micron line and space patterns, within the precision of the measurement (±0.2 micron).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 275
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Johnson, L. F., in “Ion Bombardment Modification of Surfaces and its Applications,” Auciello, O., Editor, Elsevier Scientific Publishing Co., 1984.Google Scholar
2. Bollinger, L. D., Solid State Technol. (1983), 99.Google Scholar
3. McCreary, J. R. and Thorn, R. J., J. Chem. Phys., 48 (1968) 3290, and references therein.Google Scholar
4. McKinley, J. D., J. Chem. Phys. 40 (1964) 120.Google Scholar
5. Sigmund, P., Phys. Rev., 184 (1969) 383.Google Scholar
6. Thompson, M. W., Phil. Mag. 18 (1968) 377.Google Scholar
7. Coburn, J. W. and Winters, H. F., J. Appl. Phys., 50 (1979) 3189.Google Scholar
8. Coburn, J. W., Winters, H. F. and Chuang, T. J., J. Appl. Phys., 48 (1977) 3532.Google Scholar
9. Tu, Y. Y., Chuang, T. J., and Winters, H. F., Phys. Rev. B, 23 (1981) 823.Google Scholar
10. Gerlach-Meyer, U., Surface Sci., 103 (1981) 524.Google Scholar
11. Geis, M. W., Lincoln, G. A., Efremow, N., and Piacenti, W. J., J. Vac. Sci. and Technol., 19 (1981) 1390.Google Scholar
12. Lincoln, G. A., Geis, M. W., Mahoney, L. J., Chu, A., Vojak, B. A., Nichols, K. B., Piacenti, W. J. and Lindley, W. T., J. Vac. Sci. and Technol., 20 (1982) 786.Google Scholar
13. Erley, W., Surface Sci., 114 (1982) 47.Google Scholar