Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T15:50:27.027Z Has data issue: false hasContentIssue false

Chlorine Precursors For Gate Oxidation Processes

Published online by Cambridge University Press:  10 February 2011

M.J. Mc Geary
Affiliation:
Olin Corp., Microeletronic Materials Div., Cheshire,CT 06410
P.W. Mertens
Affiliation:
IMEC vzw, Leuven, B‐3001 Belgium
B. Vermeire
Affiliation:
IMEC vzw, Leuven, B‐3001 Belgium
M. Heyns
Affiliation:
IMEC vzw, Leuven, B‐3001 Belgium
H. Sprey
Affiliation:
ASM Europe B.V., Bilthoven, The Netherlands
A. Lubbers
Affiliation:
Olin Microelectronic Materials NV, Zwijndrecht, Belgium
M. Schaekers
Affiliation:
IMEC vzw, Leuven, B‐3001 Belgium
Get access

Abstract

1,1,1‐Trichloroethane (TCA) has played a vital rôle in contemporary semiconductor fabrication as a source for chlorine during the oxidation of silicon substrates. However, TCA has been identified as an ozone depleting compound by the Montreal Protocol, and in the United States The Clean Air Act Amendments of 1990 severely restrict its use in many applications. This paper discusses oxalyl chloride (OC) and trans‐ 1,2‐dichloroethylene (DCE) as alternatives to TCA for silicon oxidation processes. Information on precursor vapor delivery, atmospheric chemistry, industrial hygiene, and combustion chemistry will be presented along with comparisons of metal decontamination efficiency and electrical properties (Qbd) for oxides grown in the presence of each precursor The suitability of OC for low temperature, ultra‐thin oxidation processes will also be addressed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Tressler, R.E., Stach, J. and Mets, D.M., J. Electrochem. Soc. 124, p. 607 (1977).Google Scholar
2 Monkowski, J., Solid State Technology, August, (1979).Google Scholar
3 USA‐Clean Air Act Amendments of 1990, Title VI, Public Law 101–549.Google Scholar
4 “Common position (EC) No. 37/94 adopted by the Council on 27 July 1994; on substances that deplete the ozone layer” Official Journal of the European Communities, C301, 01 (1994).Google Scholar
5 See ref. 3 and subsequent clarifications by EPA in the Federal Register.Google Scholar
6 Book of SEMI Standards, Chemicals/Reagents Volume, Mountain View, CA, 1993. SEMI C1.26–92 and SEMI C7.15–91.Google Scholar
7 Barbee, S.J., Stone, J.J. and Hilaski, R.J., Am. Ind. Hyg. Assoc. J. 56(1), p. 74 (1995).Google Scholar
8 Hourai, M., Naridomi, T., Oka, Y., Murakami, K., Sumita, S., Fujino, N., and Shiraiwa, T., Jpn. J. Appl. Phys. 27, p. L2361 (1988).Google Scholar
9 Mertens, P.W., Rotondaro, A.L.P., Meuris, M., Schmidt, H.F., Heyns, M.M. and Gräf, D.: “Effect of oxidation ramp up onthe redistribution of metallic contamination in gate oxides”, Institute of Environmental Science 40th annual Technical Meeting, Chicago, IL, May 1–6, 1994, in IES 40th Annual Technical Meeting 1994 Proceedings Vol. 1(IES, Mount Prospect, IL, 1994), p. 325.Google Scholar
10 Folkins, I. and Brasseur, G., Chem. Ind. April, p. 294 (1992).Google Scholar
11 Midgley, P.M., Atmosph. Environ. 23, p. 2663 (1989).Google Scholar
12 Hazcrdous Substances Data Bank No. 6361 April (1990).Google Scholar
13 Mertens, P.W., Vermehre, B., Depas, M., Mc Geary, M.J., Sees, J., O'Brien, S.C., Meuris, M., Heyns, M.M., and Gräf, D.: “Environmental‐friendly chlorine during oxidation”’ Institute of Environmental Science 41st Annual Technical Meeting, Anaheim, CA, April, 1995 in IES 41st Annual Technical Meeting 1994 Proceedings vol. CC (IES, Mount Prospect, IL, 1995, p. 474.Google Scholar
14 Rowe, V.K., Wujkowski, T., Wolf, M.A., Sadek, S.E., and Stewart, R.D., Am. Ind. Hyg. Assoc. J. 24 p.541 (1963).Google Scholar
15 “Extrema Trans‐LC Trans‐1,2‐Dichloroethylenen)”, DS Trans‐LC W/spec 0793, Air Products and Chemicals, Inc, Carlsbad, CA, 1993.Google Scholar
16 Sax, N.I. and Lewis, R.J., Dangerous Properties of Industrial Materials, Vol. III, Van Nostrand Reinhold, New York, NY, 1989, p. 1900.Google Scholar
17 Back, K.C. Thomas, A.T. and Mac Ewen, I.D., National Technical Information Service, PB214270, Springfield, VA (1972).Google Scholar
18 Stockinger, H.E., ‘The Halogens and Nonmetals Boron and Silicon’; in Patty's Industrial Hygiene and Toxicology, edited by Clayton, G.D. and Clayton, F.E.. John Wiley and Sons, New York, NY, 1981, p. 2999.Google Scholar
19 Weeks, M.H., Musselman, N.P., Yevixch, P.P., Jacobson, K.H., and Oberst, F.W., Am. Ind. Hyg. Assoc. J. 25, p. 470 (1964).Google Scholar
20 See ref. 13 and citations therein.Google Scholar
21 Estimated from vapor pressure data for TCA and DCE found in Beilstein Handbook of Organic Chemistry, available via an on‐line search of that database.Google Scholar
22 Wohlier, F., “Diffusion and Defect Data‐Solid State Data”, Trans Tech Publications, 1986.Google Scholar
23 Chase, M., Davies, C., Dawney, J., Frump, D., Mc Donald, R. and Syverud, A., “JANAF Thermo‐chemical Tables”, 1986.Google Scholar
24 Jannssens, E.J. and DeClerck, G.J., J. Electrochem. Soc. 125, p. 1696 (1978).Google Scholar
25 See, for example, the SIA Roadmap.Google Scholar
26 Abdul‐Sada, A.K., Avent, A.G., Parkington, M.J., Ryan, T.A., Seddon, K.R. and Welton, T. J. Chem. Soc., Dalton Trans, p. 3283 (1993).Google Scholar