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Chemistry of Point Defect in Silicon and its Applications in Semiconductor Technology

Published online by Cambridge University Press:  26 February 2011

S. Pizzini ,
S. Binetti  and
M. Acciarri
S. Pizzini
Affiliation:
INFM- Department of Physical Chemistry and Electrochemistry, Via Golgi, 10 20133 Milano, (Italy)
S. Binetti
Affiliation:
INFM- Department of Physical Chemistry and Electrochemistry, Via Golgi, 10 20133 Milano, (Italy)
M. Acciarri
Affiliation:
INFM- Department of Physical Chemistry and Electrochemistry, Via Golgi, 10 20133 Milano, (Italy)
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Abstract

The chemistry of the interactions between point defects and impurities is discussed by considering first the general thermodynamic and kinetic aspects of these reactions, deserving major attention to the identity of of the stable chemical species eventually formed and to the boundary conditions for diffusion controlled and reaction controlled interaction processes.

The second part of the paper is instead dedicated to the analysis of the chemistry of carbon, oxygen, hydrogen and point defects in silicon, which is a system of major technological interest.

We postulate that at low enough temperatures, when homogeneous nucleation processes are slow, spinodal decomposition assists oxygen aggregation phenomena. We postulate, also, on the basis of the existing knowledge, that carbon and hydrogen favour alternative reaction paths for oxygen in the due of clustering processes and discuss the hydrogen-enhanced oxygen diffusivity in the frame of a conventional trapping model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 913
Copyright
Copyright © Materials Research Society 1995

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References

[1] Rao, C.N.R., Gopalakrishan, J., New directions in solid state Chemistry, Cambridge University Press (Cambridge, 1986)Google Scholar
[2] Van Oosten, A.B., PhD Thesis, University of Amsterdam (1989)Google Scholar
[3] Semiconductor Silicon 1977,1981,1986,1990, The Electrochem Soc. Inc., (1977,1981, 1986,1990) and references cited herein.Google Scholar
[4] Mashovets, T.V., Sov. Phys. Semicond. 18, 5 (1982)Google Scholar
[5] Sumino in: Solid state Phenomena, Vol. 6 & 7, TransTech Publ. (Zuerich, 1989) pp. 197–210Google Scholar
[6] Orlowski, M. in: Semiconductor Silicon 1994, Vol. 94–10, The Electrochem. Soc. (1994). pp.579–592 Google Scholar
[7] Kimerling, L.C., Asom, M.T., Benton, J.L., Drevinsky, P.J., Caefer, C.E., Materials Science Forum, Vols. 38–41, TransTech Publ., Zuerich,(1989) pp. 141–150 Google Scholar
[8] Watkins, G.D., Materials Sci. Forum, Vols. 38–41, TransTech Publ., Zuerich(1989) pp. 39–50 Google Scholar
[9] Gehlhoff, W., Rehse, U., Solid State Phenomena, Vols. 6 & 7, TransTech Publ., Zuerich (1989) pp.257–264 Google Scholar
[10] Crawford, J.H. jr. Slifkin, L.M., Point defects in solids, Plenum Press (1972) Vol.1Google Scholar
[11] Kang, J.S., Schroder, D.K., J. Appl. Phys. 65, 2974 (1989)Google Scholar
[12] Pizzini, S. in: Defects in Electronic Ceramics, edited by Pizzini, S. TransTech Publications; Zuerich (1993), pp. 81–120 Google Scholar
[13] Kelton, K.F., Crystal Nucleation in liquids and glasses, Solid State Physics, Vol.45; Ehrenreich, H., Turnbull, O. Eds. Academic Press (New York) 1991 pp. 75–177 Google Scholar
[14] Wagner, R., Kampmann, R., Homogeneous second Phase Precipitation, in Materials Science and Technology, Vol.5 Cahn, R.W., Haasen, P., Kramer, E.J. Edt. VHC, Weinheim, (1991) pp. 213–303 Google Scholar
[15] Hu, S.M., J. Electrochem. Soc. 138, (1992) 2066 Google Scholar
[16] Hu, S.M., Phys. Rev. 180,773 (1969)Google Scholar
[17] Estreicher, S.K., Phys.Rev. B 41, 9886 (1990)Google Scholar
[18] Waite, T.R., Phys. Rev. 107,463 (1957)Google Scholar
[19] Murray, R., Graff, K., Pajot, B., Strijkmans, K., Vandendriessche, S., Gripink, B., Marchandise, H., J. Electrochem.Soc. 139,3582 (1992)Google Scholar
[20] Baghdadi, A., Bullis, W.M., Croarkin, M.C., Li, Yue-zhen, Scace, R.I., Series, R.W., Stallhofer, P., Watanabe, M., J. Electrochem. Soc. 136 (1989) 2015 Google Scholar
[21] Acerboni, S., Pizzini, S., Binetti, S., M.Acciarri, , J.Appl.Phys. 76,2703 (1994)Google Scholar
[22] Wada, K., Inue, N. in :Semiconductor Silicon 1986, Vol. 86–4, The Electrochem. Soc. 1986) pp. 778–789 Google Scholar
[23] Taylor, W.J., Tan, T.Y., Goesele, U., Appl. Phys. Lett. 62, 3336 (1993)Google Scholar
[24] in: Diffusion in solids, Unsolved problems edited by Murch, G.E., TransTech Publ., Zuerich, (1992) pp. 189–206 Google Scholar
[25] Rava, P., Gatos, H.C., Lagowski, J., Appl. Phys. Lett. 38,274 (1981)Google Scholar
[26] Snyder, L.C., Corbett, J.W., Deak, P., Wu, R. in: Defects in Electronic Materials. MRS Volume 104 (1987) pp.179–184 Google Scholar
[27] Londos, C.A., McQuaid, S.A., Binns, M.J., Newman, R.C., Tucker, J.H., Solid State Phenomena, Vol.32–32, TransTech Publ. (Zuerich,1993) pp. 161–166 Google Scholar
[28] Newman, R.C., Tucker, J.H., McQuaid, S.A., Materials Sci. Forum, Vol. 83–87, TransTech Publ. Zuerich, 1992, pp. 87–92 Google Scholar
[29] Glinchuk, K.D., Litovchenko, N.M., Salnik, Z.A., phys. stat. sol. (a) 71, 83 (1982)Google Scholar
[30] in: Defects in Electronic Materials. MRS Volume 104 (1987) pp. 189–192 Google Scholar
[31] Kamiura, Y., Endo, K., J. Appl. Phys. 61, 2478 (1987)Google Scholar
[32] Stavola, M., Patel, J.R.. Kimerling, L.C., Freeland, P.E., Appl. Phys. Lett. 42, 73 (1983)Google Scholar
[33] Mikkelsen, J.C., Appl. Phys. Lett. 40,336 (1982)Google Scholar
[34] McQuaid, S.A., Newman, R.C., Tucker, J.H., Lightowlers, E.C., Kubiak, R.A.A., Gouldingd, M., Appl. Phys. Lett. 58, 2933 (1991)Google Scholar
[35] Wert, C.A., Frank, R.C., Ann. Rev. Mater.Sci. 13, 139 (1983)Google Scholar
[36] Leroueille, J., These Universite Pierre et Marie Curie, Paris 6 (1980)Google Scholar
[37] Newman, R.C., Infra-red Studies of crystal defects, Taylor & Francis (London) 1973 Google Scholar
[38] Oehrlein, G.S., Lindstroem, J.L., Corbett, J.W., Appl. Phys. Lett. 40, 241 (1982)Google Scholar
[39] Lindstrom, J.L., Weman, H., Oehrlein, G.S., phy.stat. sol.(a) 99, 581 (1987)Google Scholar
[40] Shimura, F., J.Appl. Phys. 59,3251 (1986)Google Scholar
[41] Pizzini, S., Binetti, S., Acciarri, M., Acerboni, S., phys. stat. sol.(a) 138, 451 (1993)Google Scholar
[42] Lindstrom, J.L., Hallberg, T., Phys. Rev. Lett. 72, 2792 (1994)Google Scholar
[43] Deak, P., Snyder, L.C., Corbett, J.W., Phys. Rev. Lett. 66, 747 (1991)Google Scholar