Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T07:29:59.410Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemisorption of HF on Silicon Surfaces

Published online by Cambridge University Press:  25 February 2011

S. A. Joycea ,
J. A. Yarmoff ,
A. L. Johnson  and
T. E. Madey
S. A. Joycea
Affiliation:
Surface Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899
J. A. Yarmoff
Affiliation:
Surface Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899
Get access

Abstract

We have investigated the interaction of gaseous hydrofluoric acid (HF) with single crystal silicon surfaces using soft x-ray photoemission spectroscopy and Electron Stimulated Desorption Ion Angular Distributions (ESDIAD). Examination of the Si(2p) core level for surfaces saturated with HF shows the formation of silicon-fluoride bonds indicating the dissociative chemisorption of HF on both Si(111) and Si(100) surfaces. Inspection of the F(2s) and F(2p) valence levels at saturation coverage indicate that only one-half monolayer of fluorine bonds to the silicon. The primary ion desorbed by electron bombardment of these surfaces is F+ with only a minor contribution from H+. ESDIAD images from a saturation coverage of HF on stepped Si(100) surfaces reveal F+ desorption primarily along the direction of the terrace dimers. The ESDIAD patterns from HF adsorbed on Si(111) are characterized by strong normal F+ emission with a weak background component of off-normal emission. These results are consistent with the dissociative chemisorption of HF where the ion emission direction is determined by the Si-F bond directions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 185
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kay, E., Coburn, J., and Dilks, A., Topics Curr. Chem. 94, 1 (1980).CrossRefGoogle Scholar
2. Burrows, V.A., Chabal, Y.J., Higashi, G.S., Raghvarachi, K., and Christman, S.B., Appl. Phys. Lett. 53, 998 (1988).Google Scholar
3. Yarmoff, J.A., Himpsel, F.J., and Meyerson, B., (unpublished results).Google Scholar
4. Weinberger, B.R., Peterson, G.G., Eschrich, T.C., and Krasinski, H.A., J. Appl. Phys. 60, 3232 (1986).Google Scholar
5. Himpsel, F.J., Eastman, D.E., Heimann, P., Reihl, B., White, C.W., and Zehner, D.M., Phys. Rev. B 24,1120 (1981).Google Scholar
6. Eastman, D.E., Donelon, J.J., Hein, N.C., and Himpsel, F.J., Nucl. Instrum. Methods 172, 327 (1980).Google Scholar
7. Johnson, A.L., Stockbauer, R., Barak, D., and Madey, T.E., in M. Knotek and R. Stulen, eds. Proceedings of DIET III, Springer Series in Surface Science 13(1988) p. 130.Google Scholar
8. McFeely, F.R., Morar, J.F., Shinn, N.D., Landgren, G., and Himpsel, F.J., Phys. Rev. B 30, 764 (1984).Google Scholar
9. Yarmoff, J.A., Taleb-Ibrahimi, A., McFeely, F.R., and Avouris, Ph., Phys. Rev. Lett. 60, 960 (1988).Google Scholar
10. Johnson, A.L., Walczak, M.M., and Madey, T.E., Langmuir 4, 277 (1988).Google Scholar
11. Miskovic, Z., Vukanic, J., and Madey, T.E., Surf. Sci. 141, 285 (1984); 169, 405 (1986).Google Scholar