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Chemically Amplified Resist Approaches for E-beam Lithography Mask Fabrication

Published online by Cambridge University Press:  15 March 2011

J.R. Maldonado ,
M. Angelopoulos ,
W. Huang ,
R. L. Brainard ,
J. M. Guevremont  and
Z. Tan
J.R. Maldonado
Affiliation:
Etec Systems, an Applied Materials Company, Hayward, CA
M. Angelopoulos
Affiliation:
IBM TJ Watson Research Center, Yorktown Heights, NY
W. Huang
Affiliation:
IBM Corp., Hopewell Junction, NY
R. L. Brainard
Affiliation:
Shipley, Marlborough, MA
J. M. Guevremont
Affiliation:
Shipley, Marlborough, MA
Z. Tan
Affiliation:
IBM Corporation, San Jose, CA
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Abstract

This paper describes stable, high sensitivity (5-10 μC/cm2 at 50 kV) e-beam resist systems utilizing chemical amplification suitable for mask fabrication for device generations below 100 nm. In particular, two resist systems with improved performance for mask fabrication developed in a joint program by Etec, IBM and Shipley will be described: a Si- doped version of the IBM KRS-XE resist (now commercially available) developed at IBM Research, and a new MANA resist developed at Shipley. Commercialization issues for mask e-beam resists also will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 705: Symposium Y – Nanopatterning–From Ultralarge-Scale Integration to Biotechnology , 2001 , Y1.3
Copyright
Copyright © Materials Research Society 2002

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References

1. Huang, W.S., Kwong, R., Hartley, J., Moreau, W., Angelopoulos, M., Magg, C., Lawliss, M., Japan Photomask 2000, SPIE, 4066, 150 (2000).Google Scholar
2. Huang, W.S., Kwong, R., Moreau, W., Lang, R., Robinson, C., Mederios, D., Petrillo, K., Aviram, A., Mahorowala, A., Angelopoulos, M., Magg, C., Lawliss, M., Faure, T., SPIE, 4409, 287 (2001).Google Scholar
3. Medeiros, D. R., Mahorowala, A.P., Huang, W.S., Kwong, R.W., Lang, R. N., Moreau, W.M. and Angelopoulos, M., Int. Conf. of Photopolym., “Photopolymers Principles- Processes and Materials”, 17 4 (2000);Google Scholar
4. Ito, H., Proc. SPIE, 3678, 2 (1999); R.L. Brainard, C. Henderson, J. Cobb, V. Rao, J.F. Mackevich, U. Okoroanyanwu, S. Gunn, J. Chambers, and S. Connolly, J. of Vac. Sci. and Technol., B 17(6), 3384 (1999).Google Scholar
5. Ito, H., Breyta, G., Hofer, D., Sooriyakumaran, R., Petrillo, K., Seeger, D., J. Photopolym. Sci. Technol., 7(3), 433 (1994).Google Scholar
6. Ito, H., Breyta, G., Conley, W., Hagerty, P., Thackeray, J., Holmes, S., Nunes, R., Fenzel-Alexander, D., Dipietro, R., Hofer, D., J. Photopolym. Sci. Technol., 9(4), 557 (1996).Google Scholar
7. Mertesdorf, C., Muenzel, N., Falcigno, P., Kirner, H., Nathal, B., Schacht, H., Schulz, R., Slater, S., Zettler, A., ACS Symp. Ser., 614, 35 (1995).Google Scholar
8. Lewellen, J., Gurer, E., Lee, E., Chase, L., Dulmage, L., Proc. SPIE, 3882, 45 (1999); U. Kumar, A. Pandya, R. Sinta, W.S. Huang, R. Bantu, A. Katnani, Proc. SPIE, 3049, 135 (1997).Google Scholar
9. Mertesdorf, C., Muenzel, N., Holzwarth, J., Falcigno, P., Schacht, H., Rohde, O., Schulz, R., Slater, S., Frey, D., Proc. SPIE, 2438, 84 (1995).Google Scholar
10. Kim, J., Park, J., Jang, J., Kim, J., Proc. SPIE, 3678, 625 (1999).Google Scholar
11. Bowden, W., Malik, S., Ferreira, J., Whewell, A., Kokubo, T., Kawabe, Y., Fujimori, T., Tan, S., J. Photopolymer Sci. Technol., 13(4), 507 (2000).Google Scholar
12. Chowdhury, C., Chaudhuri, G., Guha, S., Mukherjee, A., Kundu, N., J. Org. Chem., 63, 1863 (1998).Google Scholar