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Chemically Amplified Resist Approaches for E-beam Lithography Mask Fabrication

Published online by Cambridge University Press:  15 March 2011

J.R. Maldonado ,
M. Angelopoulos ,
W. Huang ,
R. L. Brainard ,
J. M. Guevremont  and
Z. Tan
J.R. Maldonado
Affiliation:
Etec Systems, an Applied Materials Company, Hayward, CA
M. Angelopoulos
Affiliation:
IBM TJ Watson Research Center, Yorktown Heights, NY
W. Huang
Affiliation:
IBM Corp., Hopewell Junction, NY
R. L. Brainard
Affiliation:
Shipley, Marlborough, MA
J. M. Guevremont
Affiliation:
Shipley, Marlborough, MA
Z. Tan
Affiliation:
IBM Corporation, San Jose, CA
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Abstract

This paper describes stable, high sensitivity (5-10 μC/cm2 at 50 kV) e-beam resist systems utilizing chemical amplification suitable for mask fabrication for device generations below 100 nm. In particular, two resist systems with improved performance for mask fabrication developed in a joint program by Etec, IBM and Shipley will be described: a Si- doped version of the IBM KRS-XE resist (now commercially available) developed at IBM Research, and a new MANA resist developed at Shipley. Commercialization issues for mask e-beam resists also will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 705: Symposium Y – Nanopatterning–From Ultralarge-Scale Integration to Biotechnology , 2001 , Y1.3
Copyright
Copyright © Materials Research Society 2002

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