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Chemical Wear of Cu CMP

Published online by Cambridge University Press:  14 March 2011

Hong Liang
Hong Liang*
Affiliation:
University of Alaska Fairbanks; Jean-Michel Martin and Beatrice Vacher, Ecole Centrale de Lyon; and Vlasta Brusic, Cabot Corporation
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Extract

In this work, we used surface analysis techniques, such as a field-emission highresolution analytical TEM, X-ray spectroscopy, and XPS to analyze abrasive particles after polishing. Results showed evidence of copper oxide (Cu2O) in the polished slurry. However, there was no metallic crystalline copper detected. After comparing these data with the results obtained from our electro-chemical experiments, we propose two possible chemical wear mechanisms in Cu CMP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 613: Symposium E – Chemical-Mechanical Polishing 2000 - Fundamentals… , 2000 , E2.5.1
Copyright
Copyright © Materials Research Society 2000

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References

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