Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T17:37:15.387Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical Vapor Deposition of Silicon Carbide Using a Novel Organometallic Precursor

Published online by Cambridge University Press:  25 February 2011

Wei Lee ,
Leonard V. Interrante ,
Corrina Czekaj ,
John Hudson ,
Klaus Lenz  and
Bing-Xi Sun
Wei Lee
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, NY 12180-3590.
Leonard V. Interrante
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, NY 12180-3590.
Corrina Czekaj
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, NY 12180-3590.
John Hudson
Affiliation:
Department of Materials Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590.
Klaus Lenz
Affiliation:
Department of Materials Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590.
Bing-Xi Sun
Affiliation:
Department of Materials Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590.
Get access

Abstract

Dense silicon carbide films have been prepared by low pressure chemical vapor deposition (LPCVD) using a volatile, heterocyclic, carbosilane precursor, MeHSiCH2SiCH2Me(CH2SiMeH2). At deposition temperatures between 700 and 800° C, polycrystalline, stoichiometric SiC films have been deposited on single crystal silicon and fused silica substrates. Optical microscopy and SEM analyses indicated formation of a transparent yellow film with a uniform, featureless surface and good adherence to the Si(lll) substrate. The results of preliminary studies of the nature of the gaseous by-products of the CVD processes and ultrahigh vacuum physisorption and decomposition of the precursor on Si(100) substrates are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 431
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Schlichting, J. Powder Met. Intl. 12, 141 (1980).Google Scholar
2. Lely, A. Ber. Dtsch. Keram. Ges. 32, 229 (1955).Google Scholar
3. O'Connor, J.R.; Smiltens, J., eds. Silicon Carbide A High Temperature Semiconductor. New York: Permagon Press (1960).Google Scholar
4. Marshall, R.; Faust, J.; Ryan, C., eds. Silicon Carbide-1973. Columbia, S.C.: University of South Carolina Press (1974).Google Scholar
5. Campbell, R.B.; IEEE Trans. Indus. Electr., IE–29, 124 (1980).Google Scholar
6. Bessman, T.M.; Stinton, D.P; Lowden, R.A.; MRS Bull. 45 (1988).Google Scholar
7. Fujiwara, Y.; Sakuma, E.; Misawa, S.; Endo, K.; Yoshida, S. Appl. Phys. Lett. 49, 388 (1986).Google Scholar
8. Interrante, L.V.; Czekaj, C.L.; Lee, W. NATO Meeting Proc.-The Mechanisms of Reaction of Organometallic Compounds with Surfaces, London: Plenum Press (1988), in press.Google Scholar
9. Kriner, W. J. Org. Chem. 29, 1601 (1961).Google Scholar
10. Interrante, L.V.; Lee, W.; McConnell, M; Lewis, N.; Hall, E. J. Electrochem Soc. in press.Google Scholar
11. Kurtz, E.A.; Hudson, J. Surface Sci., 195, 15 (1988).Google Scholar
12. Palik, E.D., ed. Handbook of Optical Constants of Solids. New York: Academic Press (1985), p 587.Google Scholar