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Chemical Vapor Deposition of Ruthenium Dioxide Thin Films From Bis(2, 4-Dimethylpentadienyl)Ruthenium

Published online by Cambridge University Press:  10 February 2011

Lamartine Meda ,
Richard C. Breitkopf ,
Terry E. Haas  and
Rein U. Kirss
Lamartine Meda
Affiliation:
Department of Chemistry, Northeastern University, Boston, MA 02115
Richard C. Breitkopf
Affiliation:
Department of Chemistry, Tufts University, Medford, MA 02155
Terry E. Haas
Affiliation:
Department of Chemistry, Tufts University, Medford, MA 02155
Rein U. Kirss
Affiliation:
Department of Chemistry, Northeastern University, Boston, MA 02115
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Abstract

Thin films of polycrystalline RuO2 were deposited from bis(2,4-dimethylpentadienyl) ruthenium, (η5-2, 4-Me2C5H5)2Ru (1) and ruthenocene (2) on quartz and silicon substrates between 200 and 500°C under Ar/O2 or O2. Films deposited from 1 were more adherent than those grown from 2 under the same conditions, however, none of the films were particularly adherent when O2 was used as a carrier gas. SEM revealed a columnar structure for both precursors with grain size ranging from 0.15 – 1 5μ. Crystallinity increased after annealing the films to 800°C. Resistivity decreased as the annealing temperature increased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 75
Copyright
Copyright © Materials Research Society 1998

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References

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