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Chemical Vapor Deposition of Boron Phosphide Thin Films

Published online by Cambridge University Press:  25 May 2012

Julia K.C. Abbott ,
J. Daniel Brasfield ,
Philip D. Rack ,
Gerd J. Duscher  and
Charles S. Feigerle
Julia K.C. Abbott
Affiliation:
Dept. of Chemistry, University of Tennessee, Knoxville, TN, USA
J. Daniel Brasfield
Affiliation:
Dept. of Chemistry, University of Tennessee, Knoxville, TN, USA Development Division, Y-12 National Security Complex, Oak Ridge, TN, USA
Philip D. Rack
Affiliation:
Dept. of Materials Science Engineering, University of Tennessee, Knoxville, TN, USA
Gerd J. Duscher
Affiliation:
Dept. of Materials Science Engineering, University of Tennessee, Knoxville, TN, USA
Charles S. Feigerle
Affiliation:
Dept. of Chemistry, University of Tennessee, Knoxville, TN, USA
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Abstract

Boron Phosphide (BP) is a promising material for use as a room temperature semiconductor detector of thermal neutrons. The absorption of a thermal neutron by a 10B nucleus in BP can yield 2.3MeV of energy which in solid state BP can yield ∼0.5 million electron-hole pairs that would be detectable with minimal amplification in a device. BP thin films are grown according to the net reaction below in a cold wall chemical vapor deposition (CVD) reactor: Thin film depositions are performed using diborane and phosphine with a balance of hydrogen gas at near atmospheric pressure with RF induction heating. The resultant BP films are characterized by Raman, XRD, SEM, TEM and TEM-EELS for chemical composition, surface and bulk morphology. BP growths on Si and SiC substrates are compared. SiC provides reduced lattice mismatch for growth of BP and growth of heteroepitaxial BP on SiC will be discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g07-24
Copyright
Copyright © Materials Research Society 2012

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