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Chemical Trends in Electronic Properties of Gold-3D Transition Metal Impurity Pairs in Silicon
Published online by Cambridge University Press: 15 February 2011
Abstract
We report theoretical investigations of the chemical trends in the electronic properties of substitutional gold-interstitial transition-metal complexes in silicon. The results show that the stable pairs in trigonal symmetry are formed by a covalent mechanism which includes, besides Au and TM impurities, also the Si neighbors, rather than being derived from interactions between two electrostatically bound point charges.
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- Copyright © Materials Research Society 1997