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Chemical Stability of Reactively Sputtered AlN with Plasma Enhanced Chemical Vapor Deposited SiO2 and SiNx

Published online by Cambridge University Press:  15 February 2011

Jaeshin Cho  and
Naresh C. Saha
Jaeshin Cho
Affiliation:
Compound Semiconductor-1, Motorola Inc., Tempe, Arizona 85284
Naresh C. Saha
Affiliation:
Semiconductor Analytical Laboratory, Motorola Inc., Mesa, Arizona 85202
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Abstract

We have studied the chemical stability of reactively sputtered aluminum nitride film with plasma-enhanced chemical vapor deposited SiO2 and SiNx films. It was found that the PECVD SiO2 film reacted with A1N to form aluminosilicate (3Al2O3·2SiO2) at the SiO2/A1N interface after annealing above 550°C. The presence of Al-0 bonds at the SiO2/AlN interface was verified with x-ray photoelectron spectroscopy and x-ray induced Auger electron spectroscopy. The formation of aluminosilicate resulted in significant decrease in the wet etch rate of A1N layer. For SiNx/AlN/Si layered structure, no interfacial reactions were detected at the SiNx/AlN interface after annealing up to 850°C. These results confirm the thermodynamic predictions on the mutual stability of SiNx/AlN and SiO2/AlN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 253
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Francombe, M.H. and Krishnaswamy, S.V., J. Vac. Sci. Technol. 8, 1382 (1990).CrossRefGoogle Scholar
2. Pashley, R.D. and Welch, B.M., Solid State Electron. 18, 977 (1975).Google Scholar
3. Kwok, S.P., J. Vac. Sci. Technol. B4, 1383 (1986).Google Scholar
4. Tada, T. and Kanayama, T., J. Vac. Sci. Technol. B11, 2229 (1993).Google Scholar
5. Bhansali, A.S., Ko, D.H. and Sinclair, R., J. Electronic Mater. 19, 1171 (1990).Google Scholar
6. CRC handbook of Chemistry and Physics, 71st Ed. (CRC Press, Boston, 1990) p. 4–42.Google Scholar