Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T02:03:53.982Z Has data issue: false hasContentIssue false

Chemical Sensors Based on Individual In2O3 Nanowires

Published online by Cambridge University Press:  15 February 2011

Daihua Zhang
Affiliation:
Department of E.E.-Electrophysics, University of Southern California, Los Angeles, California 90089, U. S. A
Chao Li
Affiliation:
Department of E.E.-Electrophysics, University of Southern California, Los Angeles, California 90089, U. S. A
Xiaolei Liu
Affiliation:
Department of E.E.-Electrophysics, University of Southern California, Los Angeles, California 90089, U. S. A
Song Han
Affiliation:
Department of E.E.-Electrophysics, University of Southern California, Los Angeles, California 90089, U. S. A
Tao Tang
Affiliation:
Department of E.E.-Electrophysics, University of Southern California, Los Angeles, California 90089, U. S. A
Chongwu Zhou
Affiliation:
Department of E.E.-Electrophysics, University of Southern California, Los Angeles, California 90089, U. S. A
Get access

Abstract

Single crystalline In2O3 nanowires were synthesized and then utilized to construct field effect transistors (FETs) consisting of individual nanowires. Chemical sensors based on these In2O3 nanowire FETs have been demonstrated. Upon exposure to gaseous molecules such as NO2 and NH3, the electrical conductance of the In2O3 nanowire FETs are found to dramatically decrease rapidly, accompanied by substantial shifts in threshold gate voltage. Our In2O3 nanowire sensors exhibit significantly improved sensitivity, as well as shortened response times compared to most existing solid-state gas sensors. In addition, ultraviolet (UV) light is found to be able to greatly enhance the surface molecular desorption kinetics and serve as a “gas cleanser” for the In2O3 nanowire chemical sensors. It has been demonstrated that the recovery time of our devices can be shortened to ∼30 s by illuminating the devices with UV light in vacuum.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Cui, Y., Wei, Q. Q., Park, H. K., and Lieber, C. M., Science 293, 1289 (2001).Google Scholar
2. Law, M., Kind, H., Messer, B., Kim, F., and Yang, P. D., Angew. Chem. Int. Edit. 41, 2045 (2002).Google Scholar
3. Comini, E., Faglia, G., Sberveglieri, G., Pan, Z. W., and Wang, Z. L., Appl. Phys. Lett. 81, 1869 (2002).Google Scholar
4. Chung, W. Y., Sakai, G., Shimanoe, K., Miura, N., Lee, D. D., and Yamazoe, N., Sens. Actuators B 46, 139 (1998).Google Scholar
5. Tamaki, J., Naruo, C., Yamanoto, Y., and Matsuoka, M., Sens. Actuators B 83, 190 (2002).Google Scholar
6. Li, C., Zhang, D., Han, S.,Liu, X., Tang, T., and Zhou, C., Adv. Mater. 15, 143 (2003).Google Scholar
7. Zhang, D., Li, C., Han, S.,Liu, X., Tang, T.,Jin, W., and Zhou, C., Appl. Phys. Lett. 82, 112 (2003).Google Scholar
8. Zhang, D., Li, C., Han, S.,Liu, X., Tang, T.,Jin, W., and Zhou, C., Appl. Phys. A. 77, 163 (2003).Google Scholar
9. Kong, J., Franklin, N. R., Zhou, C., Chapline, M. G., Peng, S., Cho, K., and Dai, H., Science 287, 622 (2000).Google Scholar
10. Shimizu, Y. and Egashira, M., MRS Bull. 24, 18 (1999).Google Scholar