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Chemical Reactions at the in Vacuo Au/Inp Interface

Published online by Cambridge University Press:  25 February 2011

R. Stanley Williams ,
C. Thomas Tsai  and
Eun-Hee Cirlin
R. Stanley Williams
Affiliation:
Dept.of Chemistry γ Biochemistry and Solid State Science CenterUniversity of California, Los angeles, CA 90024
C. Thomas Tsai
Affiliation:
Dept.of Chemistry γ Biochemistry and Solid State Science CenterUniversity of California, Los angeles, CA 90024
Eun-Hee Cirlin
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Rd. Malibu, CA 90265
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Abstract

The reaction between a Au film and an Inp substrate occurs much more readily in vacuo than under an external pressure of an inert ga. At atmospheric pressure, the compounds Au2P3 and the γ intermetallic compound (at times designated Au7In3, Au9In4, or Au2In) are formed at 450 °C and remain fairly stable even when annealed at 500°C for hours. Under ultra-high vacuum conditions, phosphorous readily escapes from the film when a sample is annealed at 300°C for 15 minutes, and the major reaction products are the ψ phase (Au3In2) and another intermetallic compound that is probably AuIn. The presence of an inert gas creates a kinetic barrier for the escape of phosphorous from the surface, and thus Au/InP behaves more like a closed thermodynamic system under pressure than in a vacuum.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 83: Symposium J – Physical and Chemical Properties of Thin Metal Overlayers and Alloy Surfaces , 1986 , 243
Copyright
Copyright © Materials Research Society 1987

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References

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