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Chemical Profiling and Structural Studies of Ionbeam-Mixed Aluminum on Silicon

Published online by Cambridge University Press:  15 February 2011

F. Namavar ,
J. I. Budnick  and
F. A. Otter
F. Namavar
Affiliation:
Department of Phk'sics, UniversitY of Connecticut, U–46, Storrs, CT06268, (U.S.A.)
J. I. Budnick
Affiliation:
Department of Phk'sics, UniversitY of Connecticut, U–46, Storrs, CT06268, (U.S.A.)
F. A. Otter
Affiliation:
United Technologies Research Center, East Hartford, CT 06108, (U.S.A.)
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Abstract

The ion beam mixing technique has been applied to the production of Al–Si thin alloy layers as an alternative method to thermal annealing. Both unimplanted deposited aluminum thin films on silicon substrates and films implanted with energetic xenon ions were studied by Rutherford backscattering, channeling, secondary ion mass spectroscopy, nuclear resonance profiling and scanning electron microscopy techniques. The results of these experiments indicate that (i) intermixing between aluminum and silicon became observable when the implantation dose of energetic xenon through the interface surpassed 2 × 1016 ions cm−2; (ii) intermixing is dependent on the dose but not on the dose rate of implantation; (iii) damage to the silicon substrate extended only to the region penetrated by implanted ions; (iv) the Al-Si alloy layer region is uniform in texture and no segregation can be observed. Moreover, the integrity of the alloy layer is retained for a long period of room temperature annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 31
Copyright
Copyright © Materials Research Society 1982

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References

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