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Chemical Mechanical Cleaning for Post-CMP Applications: Defects and Metals Results

Published online by Cambridge University Press:  10 February 2011

E. Y. Zhao ,
R. Emami ,
I. Malik ,
K. Mishra ,
W. C. Krusell ,
J. de Larios  and
D. J. Hymes
E. Y. Zhao
Affiliation:
OnTrak Systems, Inc., 77 W. Montague Expressway, Milpitas, CA 95035
R. Emami
Affiliation:
OnTrak Systems, Inc., 77 W. Montague Expressway, Milpitas, CA 95035
I. Malik
Affiliation:
OnTrak Systems, Inc., 77 W. Montague Expressway, Milpitas, CA 95035
K. Mishra
Affiliation:
OnTrak Systems, Inc., 77 W. Montague Expressway, Milpitas, CA 95035
W. C. Krusell
Affiliation:
OnTrak Systems, Inc., 77 W. Montague Expressway, Milpitas, CA 95035
J. de Larios
Affiliation:
OnTrak Systems, Inc., 77 W. Montague Expressway, Milpitas, CA 95035
D. J. Hymes
Affiliation:
OnTrak Systems, Inc., 77 W. Montague Expressway, Milpitas, CA 95035
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Abstract

Double-sided brush scrubbing has become a dominant method for post-CMP cleaning applications. Chemicals delivered in-situ with brush scrubbing greatly enhance the cleaning capabilities. In this paper, the effect of dilute HF on reducing particulate defects and trace metal contamination on polished oxide surface is studied using a HF-compatible double-sided scrubber. AFM data on the interaction of dilute HF with oxide / tungsten plug array after tungsten CMP is also presented. Scrubbing with dilute HF is shown to be highly effective is removing slurry agglomerates that strongly adhere to the post-CMP oxide film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 137
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Schlueter, J., Solid State Tech. 39 (5S), S8 (1996).Google Scholar
2. Krusell, W. C., de Larios, J., Zhang, J., Solid State Tech. 38 (6), 109 (1995).Google Scholar
3. Roy, S. R., Ali, I., Shinn, G., and Furusawa, N., Shah, R., Peterman, S., Witt, K., Eastman, S., and Kumar, P., J. Electrochem. Soc. 142, 216 (1995).10.1149/1.2043871CrossRefGoogle Scholar
4. Hetherington, D. L., Resnick, P. J., Timon, R. P., Draper, B. L., Ravkin, M., de Larios, J., Krusell, W. C., DUMIC 1995 Conference Proceedings, 156 (1995).Google Scholar
5. de Larios, J. M., Ravkin, M. A., Hetherington, D. L., and Doyle, J. J., Semiconductor International 19 (5), 121 (1996).Google Scholar
6. Ravkin, M. A., Hetherington, D. L., de Larios, J. M., Gardner, D. G., and Krusell, W. C., CMP-MIC 1996 Conference Proceedings, 177 (1996).Google Scholar
7. Ravkin, M. A., Zhang, J. X., Jensen, A. J., Pant, A. K., Hetherington, D. L., Achuthan, K., Doyle, J. J., CMP-MIC Conference Proceedings, 423 (1997).Google Scholar