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The Chemical Interaction of Disilane on Ge(100)

Published online by Cambridge University Press:  25 February 2011

D. A. Lapiano-Smith  and
F. R. McFeely
D. A. Lapiano-Smith
Affiliation:
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
F. R. McFeely
Affiliation:
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
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Abstract

The room temperature chemisorption of disilane on Ge(100) and subsequent reaction at elevated temperatures was investigated by core level photoemission spectroscopy. At room temperature Si2H6 chemisorbs dissociatively on Ge(100) forming a surface populated largely by Si-H groups. Annealing the sample to 300°C effectively reduces the Si-H species to elemental Si. An additional anneal to 580°C promotes the diffusion of Si into the bulk and restores the Ge surface to an atomically clean state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 53
Copyright
Copyright © Materials Research Society 1992

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References

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