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Chemical Fluid Deposition of Hf-Zr-O-based Thin Films using Supercritical Carbon Dioxide Fluid

Published online by Cambridge University Press:  11 February 2015

Marina Shiokawa ,
Katsushi Izaki ,
Hiroshi Funakubo  and
Hiroshi Uchida
Marina Shiokawa
Affiliation:
Department of Materials and Life Sciences, Sophia University, Tokyo, 102-8554, Japan
Katsushi Izaki
Affiliation:
Department of Materials and Life Sciences, Sophia University, Tokyo, 102-8554, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, 226-8502, Japan
Hiroshi Uchida
Affiliation:
Department of Materials and Life Sciences, Sophia University, Tokyo, 102-8554, Japan
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Abstract

We propose some chemical processing procedures for fabricating thin films in Hf-Zr-O system by a unique film deposition technique using supercritical carbon dioxide fluid (scCO2), i.e., supercritical fluid deposition (SCFD), which would be an prospective approach for fabricating metal-oxide films for integrated circuits because of its unique characteristics; e.g., extraction ability, transportation capability, and reaction equilibrium etc., are quite favorable for the film deposition from metal-complex precursors.

The SCFD was accomplished in a closed batch-type reaction apparatus, consisting of two steps; (a) material deposition and (b) subsequent post-treatment under scCO2 atmosphere. Thin films of amorphous Hf-Zr-O were deposited on platinized silicon [(111)Pt/TiO2/(100)Si] substrates by SCFD using metal-complex precursors M[OCH(CH3)]2(C9H11O2)2 (M = Hf or Zr) at reaction temperature of 100 – 300 °C, significantly lower than those for MOCVD. These films possessed dielectric permittivity’s of approximately 20 – 25, comparable to those from conventional processes, although they still included residue of organic species that prompt the dielectric degradation under lower-frequency bias application.

Keywords

thin filmdielectric propertieschemical vapor deposition (CVD) (deposition)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1729: Symposium M – Materials and Technology for Nonvolatile Memories , 2015 , pp. 99 - 104
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Blackburn, J. M., Long, D. P., Cabanas, A. and Watkins, J. J., Science, 294 (2001) 141.CrossRefGoogle Scholar
Kondoh, E., Jpn. J. Appl. Phys., 43 (2004) 3928.CrossRefGoogle Scholar
Momose, T., Sugiyama, M., Kondoh, E., Shimogaki, Y., Appl. Phys. Exp., 1 (2008) 097002.CrossRefGoogle Scholar
Romang, A. H. and Watkins, J. J., Chem. Rev., 110 (2010) 459.CrossRefGoogle Scholar
Gougousi, T., Barua, D., Young, E. D. and Parsons, G. N., Chem. Mater., 17 (2005) 5093.CrossRefGoogle Scholar
O’Neil, A. and Watkins, J. J., Chem. Mater., 19 (2007) 5460.Google Scholar
Momose, T., Yamada, H., Kitamura, K., Hattori, Y., Shimogaki, Y. and Sugiyama, M., Proceedings of IEEE the 24th International Conference on Micro Electro Mechanical Systems (2011) 1309.CrossRefGoogle Scholar
Wei, Q., You, E., Hendricks, N. R.. Briseno, A. L. and Watkins, J. J., ACS Appl. Mater. Interfaces, 4 (2012) 2322.CrossRefGoogle Scholar
Uchida, H., Otsubo, A., Itatani, K. and Koda, S., Jpn. J. Appl. Phys., 44, (2005) 1901.CrossRefGoogle Scholar
Kano, F., Uchida, H. and Koda, S., J. Supercrit. Fluids, 50, (2009) 313.CrossRefGoogle Scholar
Uchida, H., Sekino, K., Hayakawa, Y. and Koda, S., J. Supercrit. Fluids, 66 (2012) 59.CrossRefGoogle Scholar
Müller, J., Böscke, T. S.. Schröder, U., Muller, S., Bräuhaus, D., Böttger, U., Frey, L. and Mikolajick, T., Nano Lett., 12 (2012) 4318. etc.CrossRefGoogle Scholar
Zhang, H., Solanki, R., Roberds, B., Bai, G. and Banerjee, I., J. Appl. Phys., 87 (2000) 1921. etc.CrossRefGoogle Scholar