Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-29T09:43:26.452Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical Bonding on GaAs (001) Surfaces Passivated Using SeS2

Published online by Cambridge University Press:  10 February 2011

Jingxi Sun ,
Dong Ju Seo ,
W. L. O'Brien ,
F. J. Himpsel  and
T. F. Kuech
Jingxi Sun
Affiliation:
Department of Chemical Engineering, University of Wisconsin-Madison, Madison, W153706
Dong Ju Seo
Affiliation:
Department of Physics, University of Wisconsin-Madison, Madison, W153706
W. L. O'Brien
Affiliation:
Synchrotron Radiation Center, University of Wisconsin-Madison, Madison, W153706
F. J. Himpsel
Affiliation:
Department of Physics, University of Wisconsin-Madison, Madison, W153706
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin-Madison, Madison, W153706
Get access

Abstract

Selenium disulfide has been demonstrated to be an effective passivant for GaAs (001) surfaces. This chemical treatment can be more robust and effective in reducing surface-states-based Fermi level pinning than other analogous chemical treatments. We have studied SeS2-passivated surfaces, formed by treatment of GaAs in SeS2:CS2 solution, with synchrotron radiation photoemission spectroscopy. The SeS2-treated surface consists of a chemically stratified structure of several atomic layers thickness. The As-based sulfides and selenides appear to reside on the outermost surface with the Ga-based compounds adjacent to the bulk GaAs substrate. The motion of the Fermi level within the band gap was monitored during controlled annealing conditions allowing for the specific chemical moieties responsible for the reduction in surface charge to be identified. As-based species are removed at low annealing conditions with little motion of the Fermi level. GaSe-based species, formed on the surface, are clearly shown to be associated with the unpinning of the Fermi level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 589
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kuruvilla, B. A., Ghaisas, S. V., Datta, A., Banerjee, S., Kulkarni, S. K.. J. Appl. Phys. 73, 384 (1993).Google Scholar
2. Nozaki, S., Tamura, S. and Takahashi, K.. J. Vac. Sci.Technol. B 13, 297 (1995).Google Scholar
3. Kuruvilla, B. A., Datta, A., Shekhawat, G. S., Sharma, A. K., Vyas, P. D., Gupta, R. P., and Kulkami, S. K., Appl. Phys. Lett. 69, 415 (1996).Google Scholar
4. Kuruvilla, B. A., Datta, A., Shekhawat, G. S., Sharma, A. K., D.Vyas, P., Gupta, R. P, and Kulkami, S. K., J. Appl. Phys. 80, 6274 (1996).Google Scholar
5. Barth, J., Gerken, F., Kunz, C., Nucl. Instrum. Method. 208, 797 (1983).Google Scholar
6. Scimeca, T., Watanabe, Y., Berrigan, R., and Oshima, M., Phys. Rev. B46, 10201 (1992).Google Scholar
7. Haflier, Stefan, Photoelectron Spectroscopy, 2nd ed. (Springer-Verlag, Germany, 1996), p. 456.Google Scholar
8. Sugahara, H. and Oshima, M., Oigawa, H., Shigewa, H., and Nannichi, Y. J. Appl. Phys. 69, 4349 (1991).Google Scholar
9. Waldrop, J. R., Grant, R. W., and Kraut, E. A., J. Vac. Sci. Technol. B 5, 1209 (1987).Google Scholar