Hostname: page-component-6bf8c574d5-xtvcr Total loading time: 0 Render date: 2025-02-20T14:28:32.692Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical Beam Deposition of Y2O3 Thin Films with An Ecr

Published online by Cambridge University Press:  25 February 2011

Maurice Massimo ,
Walter Varhue ,
Edward Adams  and
Stephen Titcomb
Maurice Massimo
Affiliation:
Sinmonds Precision, Vergennes VT
Walter Varhue
Affiliation:
Dept. of Electrical Eng., Univ. of Vermont, Burlington, VT 05405
Edward Adams
Affiliation:
IBM Corp., Essex Junct., VT.
Stephen Titcomb
Affiliation:
Dept. of Electrical Eng., Univ. of Vermont, Burlington, VT 05405
Get access

Abstract

Stoichiometric thin films of Y2O3 have been deposited on Si at substrate temperatures as low as 300 °C by plasma enhanced chemical vapor deposition using an electron cyclotron resonance (ECR) source. The yttrium source was an organo-metallic compound which was sublimated and fed with He carrier gas into the reactor chamber. Good capacitance-voltage characteristic curves were obtained for the dielectric film and a relative electrical permittivity of 9.9 was measured. This technique is a useful means of depositing oxide ceramic films at low substrate temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 249: Symposium Q – Synthesis and Processing of Ceramics: Scientific Issues , 1991 , 233
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bade, J. P., Baker, E. A., Kingon, A. I., Davis, R. F., and Bachmann, K. J., J. Vac. Sci. Technol. B 8 (2) 327 (1990).CrossRefGoogle Scholar
2. Minomo, S., Taniguchi, M., Ishida, Y., Sugiyo, M., Takahashi, T., Tonouchi, M., Kita, S. and Kobayashi, T., Jpn. J. of Appl. Phys., 27 (3) 411 (1988).CrossRefGoogle Scholar
3. Aida, T., Tsukamoto, A., Imagawa, K., Fukazawa, T., Saito, S., Shindo, K., Takagi, K., and Miyauchi, K., Jpn. J. of Appl. Phys., 28 (4) L635 (1989).CrossRefGoogle Scholar
4. Okada, M., Torninaga, K., Araki, T., Katayama, S. and Sakashita, Y., Jpn. J. of Appl. Phys., 29 (4) 718 (1990).CrossRefGoogle Scholar
5. Kokai, H., Kashiwagi, K., Sakamoto, Y., Morikawa, T., and Murayama, Y., Jpn. J. of Appl. Phys. 28 (11) 2268 (1989).CrossRefGoogle Scholar
6. Tsang, W. T., J. of Crystal Growth 95 121 (1989).CrossRefGoogle Scholar
7. Hashimoto, C., Oikawa, H., and Honma, N., IEEE Trans. on Elec. Dev., 36 1 14 (1989).CrossRefGoogle Scholar
8. Fukumoto, H., Imura, T., Osaka, Y., Appl. Phys. Lett. 55 (4) 360 (1989).CrossRefGoogle Scholar
9. Goldstein, R. M., and Leonhard, F. W., Proc. Electron. Components Conf., Washington D. C. 312 (1967).Google Scholar
10. Young, L., “Anodic Oxide Films”, Academic Press Inc. New York, 12 (1961).Google Scholar
11. Bezuardenhout, D. F. and Pretovius, R., Thin Solid Films, 139 (2) 121 (1986).CrossRefGoogle Scholar