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Chemical and Thermal Stability of Fluorinated Amorphous Carbon Films for Interlayer Dielectric Applications

Published online by Cambridge University Press:  10 February 2011

J. P. Chang ,
H. W. Krautter ,
W. Zhu ,
R. L. Opila  and
C. S. Pai
J. P. Chang
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974
H. W. Krautter
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974
W. Zhu
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974
R. L. Opila
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974
C. S. Pai
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974
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Abstract

The thermal and chemical stability of low k fluorinated amorphous carbon (a-C:F) material, deposited by a novel co-sputtering process using both polytetrafluoroethylene (PTFE) and graphite targets was investigated. Thin films of a-C:F with fluorine concentration of 2–55% were deposited, and carbon is observed by XPS in four distinct chemical states, C-C, C-F, C-F2, C-F 3. The relative intensity of C-Fx to C-C increased in intensity with increasing fluorine content and decreasing deposition temperature. Formation of tantalum fluoride was observed upon deposition of tantalum nitride, and the defluorination of the film could lead to reliability and delamination problems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 565: Symposium O – Low-Dielectric Constant Materials V , 1999 , 117
Copyright
Copyright © Materials Research Society 1999

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References

1 Semiconductor Industry Association, National Technology Roadmap for Semiconductor, (1998)Google Scholar
2 Murarka, S. P., Solid State Tech., March, 83 (1996).Google Scholar
3 Endo, K. and Tatsumi, T., J. Appl. Phys., 78, 1370 (1995).10.1063/1.360313Google Scholar
4 Endo, K. and Tatsumi, T., Appl. Phys. Lett., 68, 2864 (1995).10.1063/1.116350Google Scholar
5 Grill, A., Patel, V., Saenger, K. L., Jahnes, C., Cohen, S. A., Schrott, A. G., Edelstein, D. C., and Paraszczak, J. R., MRS Symp. Proc., 443, 155 (1997).10.1557/PROC-443-155Google Scholar
6 Endo, K., AVS annual meeting, Baltimore, to be published in J. Vac. Sci. Tech. (1998)Google Scholar
7 Chin, B., Ding, P., Sun, B., Chiang, T., Angelo, D., Hashim, I., Xu, Z., Edelstein, S., Chen, F., Solid State Technol., July, 141 (1998).Google Scholar
8 Moulder, J. F., Stickle, W. F., Sobel, P. E., Bomben, K. D., Handbook of X-ray Photoelectron Spectroscopy, Perkin-Elmer Corporation (1992).Google Scholar
9 Munro, H. S., Proc. of the ACS Division of Polymeric Materials: Science and Engineering, 56, 318(1997).Google Scholar
10 Endo, K., Material Research Society Bulletin, October, 55 (1997).Google Scholar
11 Zhu, W., Pai, C. S., Bair, H. E., Krautter, H. W., Opila, R. L., Dennis, B. S., Pinczuk, A., Chabal, Y. J., Grundmeier, G., Graebner, J. E., Cheung, K. P., Schilling, F. C., Case, C. B., and Jin, S., Technical Digest for 1998 IEEE International Electron Device Meeting.Google Scholar
12 Intel IEDM presentation, Dec. 1998.Google Scholar