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Chemical and Structural Characterization of Ultrathin Dielectric Films Using AEM

Published online by Cambridge University Press:  10 February 2011

J.H.J. Scott  and
E.S. Windsor
J.H.J. Scott
Affiliation:
Surface and Microanalysis Science Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899-8371, [email protected]
E.S. Windsor
Affiliation:
Surface and Microanalysis Science Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899-8371, [email protected]
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Abstract

The structure of ultrathin silicon oxynitride films, used as gate dielectrics in integrated circuits (ICs), is studied using analytical electron microscopy (AEM). Laterally homogeneous blanket films approximately 2 nm in thickness are characterized in cross section using a 300 keV field emission TEM/STEM. High resolution imaging (HRTEM) is used to investigate the accuracy and precision of film thickness measurements and their comparability to other techniques such as secondary ion mass spectrometry, spectroscopic ellipsometry, x-ray reflectivity, x-ray photoelectron spectroscopy, and medium energy ion scattering. A two dimensional magnification calibration scheme that fits a pair of basis vectors to experimental images is presented, and integrated intensity profiles are used to define film boundaries for measurement. These image processing tools simultaneously improve the repeatability of the measurements and remove subjective operator bias from the measurement process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 153
Copyright
Copyright © Materials Research Society 2000

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Footnotes

†

Certain commercial equipment, instruments, or materials are identified in this paper in order to specify the experimental procedure adequately. Such identification is not intended to imply recommendation or endorsement by the National Institute of Standards and Technology, nor is it intended to imply that the materials or the equipment identified are necessarily the best available for the purpose.

References

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