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Chemical and Structural Characterization of the Ni-Ti Alloy/6H-SiC Contacts

Published online by Cambridge University Press:  15 February 2011

M. Levit ,
I. Grimberg ,
B.-Z. Weiss  and
M. Eizenberg
M. Levit
Affiliation:
Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel
I. Grimberg
Affiliation:
Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel
B.-Z. Weiss
Affiliation:
Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel
M. Eizenberg
Affiliation:
Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel
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Abstract

Ni-Ti alloy is a promising candidate for high-temperature contact metallization for SiC electronic devices. In the present study Ni-Ti alloy thin films (100 nm) of two different compositions (Ni90Ti10 and Ni50Ti50) were coevaporated on 6H-SiC substrate. Interfacial reactions, microstructure, compositional changes, and phase formation were investigated as functions of heat-treatments in the range of 400–800 °C. The study was carried out using Auger electron spectroscopy, x-ray diffraction, and analytical transmission electron microscopy. In the case of the Ni90Ti10 alloy the interaction was found to begin at 450 °C. Ni and C are the dominant diffusing species. The reaction zone is divided into three layers. In the first layer, adjacent to the SiC substrate, the presence of a Ni-rich silicide, Ni2Si, and C precipitates, was observed. The second layer is composed mainly of TiC, while the third - of Ni2 Si. In the case of the Ni50 Ti50 alloy the interaction began at 800 °C. Carbon is the dominant diffusant. The reaction zone is divided into two layers. The first, next to the substrate layer is composed of epitaxially grown TiC and the second - of Ni3Ti2Si compound. A thin (∼5 nm) amorphous discontinuous layer was found at the TiC/SiC interface. Factors controlling phase formation in the Ni-Ti/SiC system are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 125
Copyright
Copyright © Materials Research Society 1996

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