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Charging behavior of MNOS and SONOS memory structures with embedded semiconductor nanocrystals - Computer simulation

Published online by Cambridge University Press:  05 March 2013

K. Z. Molnár
Affiliation:
Óbuda University, Kandó Kálmán Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Budapest,Tavaszmező u. 15-17, H-1084 Hungary
P. Turmezei
Affiliation:
Óbuda University, Kandó Kálmán Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Budapest,Tavaszmező u. 15-17, H-1084 Hungary
Zs. J. Horváth
Affiliation:
Óbuda University, Kandó Kálmán Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Budapest,Tavaszmező u. 15-17, H-1084 Hungary Hungarian Academy of Sciences, Research Centre for Natural Sciences, Institute for Technical Physics and Materials Science, Budapest, P.O. Box 49, H-1525 Hungary
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Abstract

Papers in the Appendix were published in electronic format as Volume 1534

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Horváth, Zs. J., Basa, P., Jászi, T., Pap, A. E., Dobos, L., Pécz, B., Tóth, L., Szöllősi, P., Nagy, K., J. Nanosci. Nanotechnol., 8, 812 (2008).CrossRefGoogle Scholar
Horváth, Zs. J., Basa, P., Mater. Sci. Forum, 609, 1 (2009).CrossRefGoogle Scholar
Horváth, Zs. J., Basa, P., in: Nanocrystals and Quantum Dots of Group IV Semiconductors, (Eds. Torchynska, T. V., Vorobiev, Yu. V.), American Scientific Publishers, 2010, p. 225.Google Scholar
Horváth, Zs. J., Molnár, K. Z., Molnár, Gy., Basa, P., Jászi, T., Pap, A. E., Lovassy, R., Turmezei, P., Phys. Stat. Sol. (C), 9, 1370 (2012); doi 10.1002/pssc.201100668 CrossRefGoogle Scholar
Lundström, K. I., Svensson, C. M., IEEE Trans. El. Dev., ED- 19, 826 (1972).CrossRefGoogle Scholar
Molnár, K. Z., Horváth, Zs. J., Proc. 7th IEEE Int. Symp. Applied Computational Intelligence and Informatics SACI2012, May 24–26, 2012, Timisoara, Romania, p. 365.Google Scholar
Basa, P., Horváth, Zs. J., Jászi, T., Pap, A. E., Dobos, L., Pécz, B., Tóth, L., Szöllősi, P., Physica E, 38, 71 (2007.)CrossRefGoogle Scholar
Frohman-Bentchkowsky, D., Lenzlinger, M., J. Appl. Phys. 40, 3307 (1969).CrossRefGoogle Scholar
Horváth, Zs. J., Hardy, V., J. Nanosci. Nanotechnol., 8, 834 (2008).CrossRefGoogle Scholar
Maes, H. E., Overstraeten, R. J., J. Appl. Phys. 47, 664 (1976).CrossRefGoogle Scholar
Horváth, Zs.J., Solid-State Electron. 23, 1053 (1980).CrossRefGoogle Scholar