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Charge-Sensitive Poly-Silicon TFT Amplifiers for a-Si:H Pixel Particle Detectors

Published online by Cambridge University Press:  21 February 2011

G. Cho ,
V. Perez-Mendez ,
M. Hack  and
A. Lewis
G. Cho
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
M. Hack
Affiliation:
Xerox Pare, Palo Alto, CA 94304
A. Lewis
Affiliation:
Xerox Pare, Palo Alto, CA 94304
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Abstract

Prototype charge-sensitive poly-Si TFT amplifiers have been made for the amplification of signals (from an a-Si:H pixel diode used as an ionizing particle detector). They consist of a charge-sensitive gain stage, a voltage gain stage and a source follower output stage. The gain-bandwidth product of the amplifier is ∼ 300 MHz. When the amplifier is connected to a pixel detector of 0.2 pF, it gives a charge-to-voltage gain of ∼ 0.02 mV/electrons with a pulse rise time less than 100 nsec. An equivalent noise charge of the front-end TFT is ∼ 1000 electrons for a shaping time of 1 μsec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1181
Copyright
Copyright © Materials Research Society 1992

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References

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