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Charged Dangling Bonds and Crystallization in Group IV Semiconductors

Published online by Cambridge University Press:  15 February 2011

P.J. Germain ,
M.A. Paesler ,
D.E. Sayers  and
K. Zellama
P.J. Germain
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27650
M.A. Paesler
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27650
D.E. Sayers
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27650
K. Zellama
Affiliation:
Université Paris VII, Groupe de Physique des Solides de L'E.N.S. Place JUSSIEU, 75221 Paris Cedex 05
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Abstract

Crystallization of amorphous Ge (or Si) has been studied as a function of temperature and the flux of ionizing radiation (or doping). The crystallization growth rate Vg takes on the form Vg = vo exp(−E/kT) where vo is an increasing function of flux (or doping). We propose the following to explain these data: A concentration of mobile dangling bonds (DBs) exists in the bulk and near the amorphous-crystalline (a-c) interface. Ionization and doping induce transitions from the uncharged state Do to the charged states D+ and D−. The process controlling crystallization resulting in the above activation energy is discussed. Only certain sites on the a-side of the a-c interface are available for crystallization, and these sites are those which have captured DBs. The charged D+; and D− states have a larger capture cross section than the uncharged Do state. Increased concentrations of charged DBs results in an enhancement of the prefactor in the above equation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 135
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

on leave from Université Paris VII, address above

+

MAP acknowledges the support of the General Electric Corporation

References

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