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Charge-Based Deep Level Transient Spectroscopy of Semiconducting and Insulating Materials

Published online by Cambridge University Press:  17 March 2011

V.I. Polyakov ,
A.I. Rukovishnokov ,
N.M. Rossukanyi  and
B. Druz
V.I. Polyakov
Affiliation:
Institute of Radio Eng. & Electronics, RAS, 11 Mohovaya str., 103907 Moscow, Russia, E-mail: [email protected]
A.I. Rukovishnokov
Affiliation:
Institute of Radio Eng. & Electronics, RAS, 11 Mohovaya str., 103907 Moscow, Russia, E-mail: [email protected]
N.M. Rossukanyi
Affiliation:
Institute of Radio Eng. & Electronics, RAS, 11 Mohovaya str., 103907 Moscow, Russia, E-mail: [email protected]
B. Druz
Affiliation:
Veeco Instruments Inc., Plainview, NY 11803, USA
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Abstract

The opportunity of the charge-based deep level transient spectroscopy (Q-DLTS) for study of the structures based on wide bandgap semiconducting and insulating materials such as diamond and Al2O3 was demonstrated. Using our isothermal Q-DLTS method with rate window (tm)scanning we obtained information about concentration, activation energy and capture cross-section of the native and extrinsic electrical active defects - trapping centers (TC) in slightly boron-doped polycrystalline diamond, diamond single-crystal and in the structures Al2O3 film on NiFe and Si substrates. In comparison with widely used capacitance-based deep level transient spectroscopy, Q-DLTS gives one possibility to investigate the structures in which a capacitance does not depend on the charge state of the surface and bulk traps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 699: Symposium R – Electrically Based Microstructural Characterization III , 2001 , R3.4
Copyright
Copyright © Materials Research Society 2002

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References

1. Polyakov, V.I., Perov, P.I., Ermakova, O.N., Ermakov, M.G., Rukovishnikov, A.I., Sergeev, V.I., Sov. Phys. Semicond., 23, 1, 76 (1989).Google Scholar
2. Polyakov, V.I., Rossukanyi, N.M., Rukovishnikov, A.I., Pimenov, S.M., Karabutov, A.V., Konov, V.I., J. Applied Physics, 84, 5, 2882 (1998).Google Scholar
3. Polyakov, V.I.,Rukovishnikov, A.I., Rossukanyi, N.M., et all, Mat.Res. Soc. Symp. Proc., 442, 687 (1997).Google Scholar
4. Polyakov, V.I., Rukovishnikov, A.I., and Rossukanyi, N.M., Proc. of ECS Conf., Gawaii, Honolulu, 99–32, 269–274 (2000).Google Scholar
5. Lang, D.V., J. Applied Physics, 45, 3023 (1974).Google Scholar
6. Polyakov, V.I., Rukovishnikov, A.I., Rossukanyi, N.M., and Ralchenko, V.G., Diamond and Related Materials, 10, 593 (2001).Google Scholar
7. Fontaine, F., J. Applied Physics, 85, 3, 1409 (1999).Google Scholar