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Charge Transport in Mesoscopic Carbon Network Structures

Published online by Cambridge University Press:  21 March 2011

V. Ksenevich
Affiliation:
Department of Physics, State University of Belarus, 220080, Minsk, Belarus
J. Galibert
Affiliation:
Laboratoire National des Champs Magnetiques Pulses, F-31432 Toulouse CEDEX 4, France
V. Samuilov
Affiliation:
Department of Physics, State University of Belarus, 220080, Minsk, Belarus Laboratoire National des Champs Magnetiques Pulses, F-31432 Toulouse CEDEX 4, France Department of Materials Science, SUNY at Stony Brook, Stony Brook, NY 11794, USA
Y.-S. Seo
Affiliation:
Department of Materials Science, SUNY at Stony Brook, Stony Brook, NY 11794, USA
J. Sokolov
Affiliation:
Department of Materials Science, SUNY at Stony Brook, Stony Brook, NY 11794, USA
M. Rafailovich
Affiliation:
Department of Materials Science, SUNY at Stony Brook, Stony Brook, NY 11794, USA
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Abstract

The charge transport and quantum interference effects in low-dimensional mesoscopic carbon networks prepared using self-assembling were investigated.

The mechanism of conduction in low-dimensional carbon networks was found to depend on the annealing temperature of the nitrocellulose precursor. The charge transport mechanism for carbon networks obtained at Tann=750°C was found to be the hopping conductivity in the entire investigated temperature range. The Coulomb gap near the Fermi level in the density of states was observed in the investigated carbon networks. The width of the Coulomb gap was found to be decreased with the annealing temperature of the carbon structures. The crossover from the strong localization to the weak localization regime of the charge transport in the carbon structures, obtained at Tann=950°C and Tann=1150°C, was observed in the temperature range T>100 K and T>20 K, respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

[1] Fung, A.W.P., Wang, Z.H., Dresselhaus, M.S. et al. Phys. Rev. B. 49, 17325 (1994).Google Scholar
[2] Fung, A.W.P., Dresselhaus, M.S. and Endo, M.., Phys. Rev. B. 48, 14953 (1993).Google Scholar
[3] Bayot, V., Piraux, L., Michenaud, J.-P. and Issi, J.-P.., Phys. Rev. B. 40, 3514 (1989).Google Scholar
[4] Mandal, P., Neumann, A., Jansen, A.G.M. et al. Phys. Rev. B. 55, 452 (1997).Google Scholar
[5] Putten, D. van der, Moonen, J.T., Brom, H.B. et al. Phys. Rev.Lett. 69, 494 (1992).Google Scholar
[6] Fung, A.W.P., Reynolds, G.A.M., Wang, Z.H. et al. J. Non-Cryst. Solids. 186, 200 (1995).Google Scholar
[7] Yoshino, K., Kajii, H., Kawagishi, Y. et al. Jap. J. Appl. Phys. 38, 4926 (1999).Google Scholar
[8] Samuilov, V.A., Galibert, J., Ksenevich, V.K., et al. Physica B, 294–295, 319 (2001).Google Scholar
[9] Shklovskii, B.I., Efros, A.L.. Electronic Properties of Doped Semiconductors (Springer Series of Solid State Science, Springer, Berlin, 1984).Google Scholar
[10] Mott, N.F. J. Non-Cryst. Solids. 1, 1 (1968).Google Scholar
[11] Mikoshiba, N.. Phys. Rev. 127, 1961 (1962).Google Scholar
[12] Zabrodski, A.G.. Sov. Phys. Semicond. 14, 670 (1980).Google Scholar
[13] Rosenbaum, R.. Phys.Rev. B 44, 3599 (1991).Google Scholar
[14] Lee, P.A., Ramakrishnan, T.V.. Rev. Mod. Phys. 57, 287 (1985).Google Scholar
[15] Bergman, G.. Phys. Rep. 107, 1 (1984).Google Scholar
[16] Hauser, J.J.. Solid St. Comm. 17 1577 (1975).Google Scholar
[17] Ramakrishnan, T.V.. Phys. Rev. Lett. 42, 673 (1979).Google Scholar
[18] Bayot, V., Piraux, L., Michenaud, J.-P., and Issi, J.-P.. Phys. Rev. B. 40, 3514 (1989).Google Scholar
[19] Langer, L., Bayot, V., Grivei, E. et al. Phys. Rev. Lett. 76, 479 (1996).Google Scholar