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Charge transport in disordered organic field-effect transistors

Published online by Cambridge University Press:  01 February 2011

Cristina Tanase ,
Paul W.M. Blom ,
Eduard J. Meijer  and
Dago M. de Leeuw
Cristina Tanase
Affiliation:
Materials Science Centre and DPI, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
Paul W.M. Blom
Affiliation:
Materials Science Centre and DPI, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
Eduard J. Meijer
Affiliation:
Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven, The Netherlands and Delft University of Technology, Department of Applied Physics and DIMES, Lorentzweg 12628 CJ Delft, The Netherlands
Dago M. de Leeuw
Affiliation:
Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven, The Netherlands
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Abstract

The transport properties of poly(2,5-thienylene vinylene) (PTV) field-effect transistors (FET) have been investigated as a function of temperature under controlled atmosphere. In a disordered semiconductor as PTV the charge carrier mobility, dominated by hopping between localized states, is dependent on the charge carrier density. The transfer characteristics of PTV FET have been modeled considering the distribution of charge carriers and mobility over the accumulation channel. Good agreement with the experimental data is obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 725: Symposium P – Organic and Polymeric Materials and Devices-Optical, Electrical, and Optoelectronic Properties , 2002 , P10.9
Copyright
Copyright © Materials Research Society 2002

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References

1. Sirringhaus, H. Tessler, N. Friend, R.H. Science 280, 1741 (1998)Google Scholar
2. Matters, M. Leeuw, D.M. de, Vissenberg, M.J.C.M., Hart, C.M. Herwig, P.T. Geuns, T. Mutsaers, C.M.J. Drury, C.J. Optical Materials 12, 189 (1999)Google Scholar
3. Vissenberg, M.C.J.M. and Matters, M. Phys. Rev. B 57, 12964 (1998)Google Scholar
4. Brown, A.R. Jarrett, C.P. Leeuw, D.M. de, Matters, M. Synt. Met. 88, 37 (1997)Google Scholar
5. Sze, S.M. Physics of Semiconductor Devices (Wiley, New York, 1981)Google Scholar
6. Dimitrakopoulos, C.D. purushothaman, S. Kymissis, J. Callegari, A. Shaw, J.M. Science 283, 822 (1999)Google Scholar
7. Shur, M. Hack, M. and Shaw, J.G. J. Appl.Phys. 66, 3371 (1989)Google Scholar