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Charge State of Copper-Silicide Precipitates in Silicon and its Application to the Understanding of Copper Precipitation Kinetics

Published online by Cambridge University Press:  10 February 2011

A.A. Istratov ,
O.F. Vyvenko ,
C. Flink ,
T. Heiser ,
H. Hieslmair  and
E.R. Weber
A.A. Istratov
Affiliation:
Department of Materials Science, University of California, Berkeley CA 94720-1760
O.F. Vyvenko
Affiliation:
Institute of Physics of St.-Petersburg State University, 198904Russia
C. Flink
Affiliation:
Department of Materials Science, University of California, Berkeley CA 94720-1760
T. Heiser
Affiliation:
Department of Materials Science, University of California, Berkeley CA 94720-1760
H. Hieslmair
Affiliation:
Department of Materials Science, University of California, Berkeley CA 94720-1760
E.R. Weber
Affiliation:
Department of Materials Science, University of California, Berkeley CA 94720-1760
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Abstract

Deep level spectra obtained on n-type silicon samples after copper diffusion and rapid quench give evidence of a positive charge state of the precipitates in p-type silicon. Non-exponential precipitation behavior of interstitial Cu is demonstrated and explained. The possibility of Coulomb interaction between copper ions and copper precipitates is suggested and its influence on Cu precipitation kinetics is disCussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 313
Copyright
Copyright © Materials Research Society 1998

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