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Charge State of Copper-Silicide Precipitates in Silicon and its Application to the Understanding of Copper Precipitation Kinetics
Published online by Cambridge University Press: 10 February 2011
Abstract
Deep level spectra obtained on n-type silicon samples after copper diffusion and rapid quench give evidence of a positive charge state of the precipitates in p-type silicon. Non-exponential precipitation behavior of interstitial Cu is demonstrated and explained. The possibility of Coulomb interaction between copper ions and copper precipitates is suggested and its influence on Cu precipitation kinetics is disCussed.
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- Copyright © Materials Research Society 1998
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