Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-17T16:11:40.359Z Has data issue: false hasContentIssue false
  • English
  • Français

Charge Carrier Transport in c-Si/a-Si:H Heterojunctions

Published online by Cambridge University Press:  01 January 1993

A. Sanders ,
H.-C. Neitzert ,
C. Swiatkqwski  and
M. Kunst
A. Sanders
Affiliation:
Hahn-Meitner-lnstitut, S1: Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
H.-C. Neitzert
Affiliation:
LPICM, Ecole Polytechnique, Palaiseau, France
C. Swiatkqwski
Affiliation:
Hahn-Meitner-lnstitut, S1: Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
M. Kunst
Affiliation:
Hahn-Meitner-lnstitut, S1: Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
Get access

Abstract

Contactless transient photoconductivity measurements in a- Si:H/c-Si heterojunctions are presented. The experimental data are decomposed in the contribution of excess electrons in a-Si:H, the contribution of excess carriers in c-Si and the contribution of excess carriers injected from a-Si:H into c-Si. A value for the electron drift mobility of in a-Si:H of 1cm2 V-1 s-1 is determined. At low excitation densities a high injection efficiency is observed, which is quenched by bias illumination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 1055
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Madan, A. Shaw, M.P., The Physics and Applications of amorphous Semiconductors,Academic, New York 1988 Google Scholar
[2] Kunst, M. and Sanders, A., Semicond.Sci.Technol. 7, 51 (1992)Google Scholar
[3] Kunst, M. and Neitzert, H.-C., J.Appl.Phys. 69, 8320 (1991)Google Scholar